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AP4800BGM-VB Product details

Product introduction:

AP4800BGM-VB is a compact, high-current N-channel MOSFET in SOP8 package, with 30V voltage rating and 13A current capability. Utilizing Trench technology, it achieves a low on-resistance of 8mΩ (at 10V drive), resulting in minimal heat generation and high efficiency. Its flexible gate drive supports a wide range of ±20V, making it compatible with most low-voltage control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 11(mΩ) 8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N MOS

Voltage Rating: 30V
Gate Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (4.5V Drive): 11 mΩ
On-Resistance (10V Drive): 8 mΩ
Maximum Current: 13A
Package: SOP8
Technology: Trench

Domain and module applications:


Power Banks, Handheld Device Power Supplies → Stable boost/buck conversion
Battery Charge/Discharge Protection → Safe cutoff, extends battery life
DC-DC Modules → Synchronous Rectification for improved efficiency
Motor Drives → Flexible speed control, fast response
Smart Plugs, USB Switches → Clean switching, no overheating
LED Strip Dimming → Uniform brightness, energy saving
Automotive Auxiliary Power Supplies → Vibration resistant, good temperature tolerance, reliable power
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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