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SI4804BDY-T1-E3-VB Product details
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Are you troubled by the large footprint and high conduction losses of low-voltage dual-channel power switching? Let VBsemi SI4804BDY-T1-E3-VB solve your problem! This SOP8-packaged dual N-MOS transistor integrates two independent N-Channels into one, capable of handling 8.5A continuous current. With a 10V drive, the on-resistance is as low as 16mΩ, resulting in excellent thermal performance. The Trench工艺 ensures extremely fast switching speed and low losses. The 30V withstand voltage fully covers various low-voltage power and load management scenarios, making it a 'dual-channel weapon' for engineers to achieve high-density, high-efficiency designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 30V | 1.7V | 8.5A | 20(mΩ) | 16(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 30V | 1.7V | 8.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 30V | 1.7V | 8.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | MOS |
Voltage Rating: 30V (Sufficient margin, safe and reliable)
Drive Range: ±20V (Compatible with 3.3V/5V/12V drives)
Threshold Voltage: 1.7V (Low-voltage logic can drive directly, simplifying the circuit)
Ultra-Low On-Resistance: 16mΩ @ 10V, 20mΩ @ 4.5V (Balances low-voltage drive and low losses)
High Current Capability: 8.5A (Single chip, dual channels, saves space)
Package: SOP8 (Suitable for automated assembly, balanced heat dissipation and footprint)
Technology: Trench (Fast switching speed, low switching loss)
Domain and module applications：
— Multiple combinations, flexible adaptation
DC-DC Conversion: Synchronous rectification or half-bridge structure, more compact with integrated dual transistors
Battery Protection and Management Systems: Dual-channel independent control enables charge/discharge switching and overcurrent protection
Load Switch: Dual power distribution, low on-resistance reduces voltage drop and temperature rise
Motor Drive: Bidirectional or half-bridge control for fans, pumps, toy motors, etc.
Multiple Output Power Supply: Replaces two single transistors, reducing PCB area usage
Communication Equipment Power Supply: High-speed switching response, suitable for hot-swap and power redundancy designs
Industrial Control Auxiliary Power Supply: Wide drive range, strong anti-interference capability, stable and reliable
SI4804BDY-T1-E3-VB — Integrated dual N-channel, small size, high efficiency, making your low-voltage design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
