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SI4940DY-T1-E3-VB Product details
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Struggling with low efficiency and high heat generation in medium-voltage power conversion? Let VBsemi SI4940DY-T1-E3-VB help! This SOP8-packaged dual N+N channel MOSFET integrates two independent MOSFETs, saving board space and offering greater design flexibility. With a 60V drain-source voltage and 7A continuous current capability, it features an ultra-low on-resistance of 28mΩ. The Trench technology ensures low switching losses and fast response, making it widely applicable in DC-DC converters, battery protection, and various power switching circuits. It is the 'dual-core workhorse' for engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | 30(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | MOS |
Drain-Source Voltage: 60V (covers common industrial and automotive bus voltages with ample margin)
Gate Drive Range: ±20V (compatible with various gate drive levels, strong adaptability)
Threshold Voltage: 1.7V (directly drivable by low-voltage logic, simplifying peripheral design)
Ultra-Low On-Resistance: 28mΩ @ 10V, 30mΩ @ 4.5V (low conduction losses, minimal heat generation)
High Current Capability: 7A (dual transistors can be paralleled to extend current rating)
Package: SOP8 (standard SMD package, balanced heat dissipation and soldering performance)
Technology: Trench (optimized switching performance, improved system efficiency)
Domain and module applications：
– Six Typical Scenarios, One Chip, Two Transistors
DC-DC Converters: Synchronous rectification or half-bridge structures, dual-transistor integration reduces parasitic parameters, improves conversion efficiency
Battery Protection & Management: Dual-path cutoff for charge/discharge circuits, fast response, protects battery safety
Motor Drive: H-bridge pre-drive for brushed/brushless motors, good matching of dual N-MOS transistors, smooth commutation
Power Management: Load switches, power path switching, high integration, saves PCB space
Automotive Electronics: 60V drain-source voltage suits 12V/24V systems, shock-resistant, high reliability
LED Lighting & Industrial Control: Constant current/constant voltage switching control, stable output, extended lifespan
SI4940DY-T1-E3-VB – Two transistors in one, efficient and worry-free, making your power design more flexible and reliable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
