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HUF76407DK8T-VB Product details
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The VBsemi HUF76407DK8T-VB is a dual N+N channel field-effect transistor belonging to the VBsemi product series. Manufactured using advanced Trench technology, it features a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for medium and low-voltage power conversion and control applications. The product is housed in a SOP8 package, integrating dual-channel MOSFETs within a compact footprint, ideal for high-density power designs and circuit modules requiring synchronous rectification or bridge drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | 30(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | MOS |
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 30 mΩ
- On-Resistance (VGS=10V): 28 mΩ
- Maximum Drain Current (ID): 7A
- Technology: Trench
Domain and module applications：
1. DC-DC Converters: The HUF76407DK8T-VB is suitable for synchronous rectification DC-DC converters. The dual N+N configuration facilitates half-bridge or full-bridge topologies, and its low on-resistance effectively improves conversion efficiency.
2. Motor Drive Modules: This device can be used in small DC motor drive circuits, such as fans, pumps, and toy motor controllers, supporting current output up to 7A to meet start/stop and speed control requirements.
3. Battery Protection & Management Systems: In lithium or lead-acid battery protection boards, this MOSFET can serve as a charge/discharge switch, leveraging its 60V drain-source voltage and low on-resistance to ensure safe and efficient current switching.
4. Power Load Switches: Suitable for power path management in various electronic devices, such as servers, communication equipment, and consumer electronics, enabling low-loss power distribution.
5. LED Lighting Drivers: In LED constant current or dimming driver circuits, this product can be used as a switching transistor, working with a control IC for stable output while reducing heat generation through low on-resistance.
6. Industrial Control Modules: In PLCs, sensor interfaces, and industrial automation control units, it can be used for signal isolation, power interfaces, etc., providing reliable switching performance.
7. Automotive Auxiliary Electronic Systems: This device meets the 60V voltage level and can be applied in automotive chargers, body control modules, and auxiliary power circuits, ensuring stable operation under wide voltage fluctuations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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