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AM4942N-T1-PF-VB Product details
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The AM4942N-T1-PF-VB is a Dual N+N MOSFET optimized for medium and low-voltage power switching applications. Utilizing Trench technology, it balances low switching losses with high reliability. The SOP8 package achieves a good balance between heat dissipation capability and board space, making it suitable for applications with space and thermal constraints, such as power management, battery protection, and motor drive. The combination of 60V drain-source voltage, 7A current capability, and 28mΩ on-resistance makes it an ideal integrated alternative to parallel single-transistor solutions in systems below 48V, particularly for high-density, high-volume designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | 30(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | MOS |
VDS=60V: Suitable for 12V/24V/36V/48V systems, providing ample margin for voltage spikes and reducing the risk of avalanche breakdown.
VGS=±20V: Compatible with 3.3V~12V logic levels, can be directly driven by MCU/PMIC, eliminating level-shifting circuits.
Vth=1.7V (Typical): Ensures full conduction even with low-voltage drive, suitable for voltage fluctuations in battery-powered applications.
RDS(on)=28mΩ @ VGS=10V, 30mΩ @ VGS=4.5V: Low on-resistance keeps temperature rise under control at full load, with excellent performance even at low gate drive voltages.
ID=7A (Single Transistor): The dual N+N integrated design allows flexible parallel or independent use, meeting current distribution and redundancy requirements for multiple loads.
Package SOP8: Dual-transistor integration saves PCB area, reduces parasitic parameters, supports medium-frequency switching, and lowers assembly costs.
Domain and module applications：
Power Management Module: Dual N-MOS suitable for synchronous rectification, load switches, and OR-ing circuits. Low on-resistance improves system efficiency and reduces the need for copper pour for heat dissipation.
Battery Protection & BMS: 60V drain-source voltage suits multi-cell lithium battery packs. Fast switching ensures reliable turn-off during overcurrent/short circuits. Dual-transistor integration simplifies protection board design.
Low-Voltage Motor Drive: Low PWM switching losses. Dual channels can form a half-bridge or independently drive two DC motors, significantly reducing controller temperature rise.
Consumer Electronics & Appliance Control: Direct logic-level drive simplifies peripheral circuits, suitable for high-volume, low-cost products like smart sockets, USB fast charging, and fan speed control.
DC-DC Converter: Replaces two single transistors in synchronous rectification, reducing parasitic inductance and layout complexity. Significant efficiency improvement under heavy load, facilitating module miniaturization.
Automotive Auxiliary Power Supply: 60V drain-source voltage margin suits 12V/24V automotive buses. Wide temperature range and Trench process reliability meet automotive-grade application requirements.
Selection Summary: The AM4942N-T1-PF-VB achieves a balanced trade-off between integration, on-resistance, and voltage rating. It is a cost-effective dual-transistor solution for 60V medium and low-voltage switching applications, particularly suitable for projects with strict requirements on PCB area, thermal management, and cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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