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SI4925DDY-T1-GE3-VB Product details
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SI4925DDY-T1-GE3-VB is a Dual-P+P MOSFET deeply optimized for low-voltage power switching scenarios. The Trench technology balances low switching losses and high reliability. The SOP8 package achieves a good balance between thermal performance and board space. The combination of 30V withstand voltage, 7.3A current capability, and 35mΩ on-resistance makes it an ideal integrated option to replace traditional dual P-channel discrete solutions, especially suitable for high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -30V | -1.7V | -7.3A | 45(mΩ) | 35(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -30V | -1.7V | -7.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -30V | -1.7V | -7.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | MOS |
VDS=-30V: Suitable for 5V/12V/24V systems, simplifying load switch and reverse polarity protection design with negative voltage architecture, providing margin for voltage spikes.
VGS=±20V: Compatible with wide-range logic level drives, can be directly connected to MCU/PMIC or dedicated gate drivers, eliminating level shifting circuits.
Vth=-1.7V (typical): Can still enter the fully conductive region under low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=35mΩ @ VGS=10V, 45mΩ @ VGS=4.5V: Maintains low on-resistance at both gate voltages, significantly reducing full-load temperature rise, allowing for reduced heat sink copper area.
ID=-7.3A: Ample continuous current margin, combined with dual P-channel parallel design, can handle peak demand of most portable and automotive auxiliary loads.
Package SOP8: Dual-channel integration saves PCB area, low parasitic parameters, supports high-frequency switching, and reduces assembly costs.
Domain and module applications：
Portable Device Power Management: Dual P-channel integration enables load switching or power path switching; low on-resistance improves conversion efficiency; small package facilitates compact design.
Battery Protection Module: Negative voltage architecture is suitable for battery negative terminal protection; fast response ensures reliable turn-off during overcurrent/short circuit; low on-resistance reduces self-heating of the protection board.
Low-Voltage Motor Drive: Low PWM switching losses; dual channels can drive bidirectional or H-bridge circuits; smoother motor operation; significantly reduced controller temperature rise.
Consumer Electronics Control Module: Logic-level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Drive: Low conduction voltage drop reduces constant current source power consumption; supports multiple parallel channels, improving overall luminous efficacy.
DC-DC Converter: Used for synchronous rectification or point-of-load power supplies; heavy-load efficiency can be improved, facilitating module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide temperature operating range are compatible with 12V automotive bus, offering high reliability.
Selection Summary: SI4925DDY-T1-GE3-VB achieves a balance between dual-channel integration, conduction performance, and package size. It is a cost-effective general-purpose choice for 30V low-voltage dual P-channel switching applications, especially suitable for projects with strict requirements on space, thermal dissipation, and system cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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