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SI9942DY-T1-E3-VB Product details
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The VBsemi SI9942DY-T1-E3-VB is a dual N+P channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using Trench technology and features a complementary N-channel and P-channel configuration, suitable for various power management and switching control applications. The device is packaged in SOP8, integrating two MOSFETs in a compact package, effectively simplifying circuit design and increasing power density. This product supports a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V, featuring low on-resistance and high current handling capability, meeting the requirements for efficient and stable power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | 24/50(mΩ) | 18/40(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Configuration: Dual N+P
- Drain-Source Voltage (VDS): ±30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.6V (N-ch) / -1.7V (P-ch)
- On-Resistance (VGS=4.5V): 24mΩ (N-ch) / 50mΩ (P-ch)
- On-Resistance (VGS=10V): 18mΩ (N-ch) / 40mΩ (P-ch)
- Maximum Drain Current (ID): ±8A
- Technology: Trench
- Package: SOP8
Domain and module applications：
1. DC-DC Converters: The SI9942DY-T1-E3-VB is suitable for half-bridge topologies in synchronous buck or boost converters, leveraging the complementary N+P configuration to simplify drive circuits and improve conversion efficiency.
2. Battery Protection and Management Modules: This device can be used in battery charge/discharge control circuits as a load switch or protection switch, achieving overcurrent and overvoltage protection to ensure safe battery system operation.
3. Load Switches and Power Distribution: In portable devices, industrial control, and communication systems, it can be used for power path management, load on/off control, and power distribution, with low on-resistance to reduce power consumption.
4. Motor Drive Modules: Suitable for low-voltage DC motor drive circuits, such as fans, pumps, small power tools, etc., for motor forward/reverse control and speed regulation.
5. Power Inverters and H-Bridge Circuits: The dual-channel complementary MOSFET can flexibly build H-bridge or half-bridge drive circuits for small inverters, audio amplifier output stages, etc.
6. Power Management Integrated Circuits (PMICs) and Auxiliary Power Supplies: In power management subsystems of servers, routers, etc., it can be used as a switching transistor for standby power, auxiliary power circuits, etc.
7. Consumer Electronics: Suitable for power control modules in consumer products like smart sockets, USB chargers, LED lighting drivers, etc., achieving efficient energy conversion and reliable switching control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
