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AM4542C-T1-PF-VB Product details
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** Are you designing a compact power module that requires both fast response from the high-side switch and extremely low losses from the low-side switch, while also needing to manage PCB area and thermal dissipation? Conventional discrete MOS solutions not only take up significant board space but also make parasitic parameters difficult to control. The VBsemi AM4542C-T1-PF-VB integrates dual N+P channel MOSFETs in an SOP8 package, leveraging a ±40V voltage rating, ultra-low on-resistance of 15/17mΩ, and bidirectional current capability of 9A/-8A to provide an integrated, efficient solution for motor drives, synchronous rectification, half-bridge converters, and other applications, making your design simpler and more reliable.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±40V | 1.8/-1.7V | 9/-8A | 18/22(mΩ) | 15/17(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±40V | 1.8/-1.7V | 9/-8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±40V | 1.8/-1.7V | 9/-8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Voltage Rating ±40V, covering positive and negative power rail applications with ample safety margin
- Gate drive range ±20V, compatible with 4.5V~12V logic level drive
- Threshold voltage 1.8V (N-ch) / -1.7V (P-ch), reliable turn-on with low-voltage drive
- On-Resistance: N-ch 15mΩ / P-ch 17mΩ @ 10V drive; N-ch 18mΩ / P-ch 22mΩ @ 4.5V drive, extremely low losses
- Maximum current 9A (N-ch) / -8A (P-ch), high current handling in an SOP8 package
- Utilizes Trench technology, excellent switching performance, superior FOM value
**
Domain and module applications：
- **Motor Drive Modules** – The complementary N+P structure can directly form H-bridge or half-bridge drives, reducing peripheral components and improving commutation efficiency.
- **Synchronous Rectification DC-DC Converters** – The low-side N-ch and high-side P-ch work perfectly together, replacing discrete solutions, reducing conduction losses, and improving conversion efficiency.
- **Load Switches / Power Path Management** – Supports positive and negative voltage control, suitable for power source switching and reverse polarity protection in battery-powered devices.
- **Audio Amplifier Output Stage** – Dual-channel complementary output ensures signal symmetry, reduces distortion, and improves sound quality.
- **Industrial Sensor / Actuator Drive** – Ample voltage margin withstands voltage spikes generated when inductive loads are turned off, offering higher reliability.
- **Portable Device Power Management** – Compact SOP8 package combined with low on-resistance effectively reduces heat generation, extending battery life.
**One Sentence Summary:** The AM4542C-T1-PF-VB is more than just a simple integration of two MOS transistors; it is the 'dual-channel all-rounder' for your medium/low voltage power and drive designs, balancing space, efficiency, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
