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ZXMC4A16DN8TC-VB Product details
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The ZXMC4A16DN8TC-VB is a Dual N+P complementary MOSFET optimized for medium and low voltage power switching and signal conversion applications. Using Trench technology, it achieves a good balance between switching speed, conduction losses, and reliability. The SOP8 package offers good thermal dissipation and a compact footprint, suitable for power management, battery protection, motor control, and various push-pull/half-bridge circuits. The combination of ±60V voltage rating, 5.3A/-4.9A current capability, and 26/55mΩ on-resistance makes it an ideal choice for multi-output, space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- VDS=±60V: Suitable for 12V/24V/48V systems, providing ample voltage margin to effectively handle inductive load spikes and bus transients.
- VGS=±20V: Wide gate drive range, compatible with 4.5V~12V logic levels, can be directly connected to MCU/drivers, simplifying peripheral circuit design.
- Vth=1.8V/-1.7V: Symmetrical N/P channel thresholds facilitate complementary drive circuit design, enabling effective turn-on under low-voltage logic.
- RDS(on)=26mΩ(N) / 55mΩ(P) @ VGS=10V; 29mΩ(N) / 60mΩ(P) @ VGS=4.5V: Both channels maintain low on-resistance, resulting in low full-load losses, suitable for continuous operation scenarios.
- ID=5.3A/-4.9A: Matched N/P channel current capability supports power transmission requirements of common half-bridge, full-bridge, and push-pull topologies.
- Package SOP8: Standard SMD package with controllable parasitic parameters, supports compact PCB layout, facilitating mass production and thermal design.
Domain and module applications：
- Motor Drive and H-Bridge Circuits: The complementary N+P architecture simplifies drive logic, PWM switching losses are low, motor operation is smooth, and controller temperature rise is controlled.
- DC-DC Converters: In synchronous rectification and active clamp circuits, the dual channels can replace discrete components, reducing board space and improving conversion efficiency.
- Battery Protection and Management: The ±60V voltage rating covers multi-cell lithium battery pack applications; fast switching characteristics ensure timely overcharge/overdischarge protection action.
- Power Load Switches: Low on-resistance reduces voltage drop and self-heating, suitable for power distribution management in servers and communication equipment.
- Signal Level Translation and Analog Switches: Complementary characteristics are suitable for low-distortion applications like bidirectional level shifting and audio switching.
- Automotive Auxiliary Equipment: Wide voltage margin and Trench technology reliability suit 12V/24V automotive buses, applicable to modules like car lights and sensor drivers.
Selection Summary: The ZXMC4A16DN8TC-VB, with its complementary dual-channel, symmetrical parameters, and standard SOP8 package, provides a compact and efficient solution for multi-channel switching, motor control, and power conversion. It offers balanced performance in voltage rating, current, on-resistance, and drive compatibility, making it a preferred choice for projects seeking design flexibility and system cost control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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