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STM8360T-VB Product details
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The STM8360T-VB is a complementary dual MOSFET (Dual-N+P) optimized for medium and low voltage power switching applications. Using Trench technology, it achieves a good balance between switching losses and reliability. The SOP8 package balances thermal dissipation and board-level integration. With ±60V voltage rating, 5.3A/-4.9A current capability, and a low on-resistance combination of 26/55mΩ, it is well-suited for applications requiring N+P pairing, such as half-bridge drivers, power conversion, and motor control. It is a compact, cost-effective alternative to discrete N+P solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
VDS=±60V: Suitable for 24V/36V/48V systems, providing ample margin for inductive load spikes and voltage transients, reducing breakdown risk.
VGS=±20V: Compatible with 3.3V~12V logic levels, can be directly connected to MCU/PMIC, simplifying gate drive design.
Vth=1.8V/-1.7V (typical): Effectively turns on under low-voltage drive, adapting to battery voltage fluctuation scenarios.
RDS(on)=26/55mΩ @ VGS=10V (N/P): Low on-resistance reduces full-load losses and temperature rise, minimizing the need for copper pour area for heat dissipation.
RDS(on)=29/60mΩ @ VGS=4.5V: Maintains usable on-performance under lower gate drive voltage, facilitating direct drive by low-voltage logic.
ID=5.3A/-4.9A: Continuous current capability matches medium-power loads, suitable for high-side and low-side switches in bridge circuits.
Package SOP8: Standard SMD package with low parasitic parameters, supports medium-frequency switching, and facilitates automated production and cost control.
Domain and module applications：
Half-Bridge/H-Bridge Drive: Integrated N+P complementary pair simplifies PCB layout, suitable for DC brushed motors and small inverters.
Motor Control Modules: Synergistic low switching and conduction losses improve PWM speed control efficiency and reduce controller temperature rise.
DC-DC Converters: The N+P combination facilitates building synchronous buck or flyback topologies, replacing multiple discrete components to increase power density.
Battery Charge/Discharge Management: Ample voltage margin handles battery voltage fluctuations, dual-channel design saves board space.
Power Protection Circuits: Fast switching and low on-resistance characteristics aid overcurrent protection response, reducing self-heating in the protection loop.
Audio Amplifier Output Stage: Complementary symmetrical structure matches OCL/BTL output circuits, improving signal distortion and enhancing efficiency.
Industrial Auxiliary Power Supplies: Wide voltage range and SOP8 thermal dissipation capability suit 24V/48V control systems like PLCs and sensors.
Selection Summary: The STM8360T-VB, with its complementary N+P dual-channel integrated design, achieves 60V voltage rating, low on-resistance, and medium current handling capability in a compact SOP8 package. It provides a simple, reliable, and cost-effective solution for medium/low voltage bridge, power, and motor drive applications, especially suitable for volume projects sensitive to board area and system cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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