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AP4569GM-VB Product details

Product introduction:

The AP4569GM-VB is a dual N+P channel power MOS transistor in an SOP8 package, integrating two independent N-channel and P-channel units, saving board space and suitable for various topologies. The device features a ±60V withstand voltage capability. The N-channel can handle a continuous current of 5.3A, and the P-channel can handle 4.9A. Trench technology provides low on-resistance: under 10V drive, the N-channel is only 26mΩ, and the P-channel is 55mΩ, resulting in low conduction losses and low heat generation. The ±20V wide gate drive range is compatible with common control signals, offering flexible use.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±60V 1.8/-1.7V 5.3/-4.9A 29/60(mΩ) 26/55(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±60V 1.8/-1.7V 5.3/-4.9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±60V 1.8/-1.7V 5.3/-4.9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P MOS

Withstand Voltage: ±60V (N/P channel)
Drive Voltage: ±20V
Threshold Voltage: N-channel 1.8V, P-channel -1.7V
On-Resistance (4.5V drive): N-channel 29mΩ, P-channel 60mΩ
On-Resistance (10V drive): N-channel 26mΩ, P-channel 55mΩ
Maximum Current: N-channel 5.3A, P-channel -4.9A
Package: SOP8
Technology: Trench

Domain and module applications:


H-Bridge Motor Drive → Forward/reverse control, crisp commutation
Half-Bridge / Full-Bridge Converters → N+P complementary output, simplified drive
DC-DC Buck-Boost Circuits → High-side and low-side matching, high conversion efficiency
Battery Charge/Discharge Protection → Dual-channel independent control, safe and reliable
LED Lighting Drive → Constant current dimming, low switching losses
Power Output Switch → Smooth on/off, low voltage drop, low heat generation
Industrial Control Signal Switching → High integration, strong anti-interference capability
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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