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AP4523GM-VB Product details
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**Are you designing a power circuit that needs to handle both high-side and low-side switching, with limited board space, yet must balance withstand voltage, current, and power dissipation? Standard discrete MOS transistor solutions consume large board area and matching can be difficult. The VBsemi AP4523GM-VB is designed for exactly this purpose - it integrates one N-channel and one P-channel MOSFET in an SOP8 package, forming a dual N+P complementary configuration. It supports ±60V withstand voltage, 5.3A/-4.9A current capability, and maintains a low on-resistance of 26/55mΩ, making your power management design more compact and efficient.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Withstand Voltage ±60V, meeting industrial and automotive-grade voltage fluctuation requirements
- Gate Drive Range ±20V, compatible with various logic level drives
- Threshold Voltage 1.8V/-1.7V, reliable turn-on with low-voltage control signals
- On-Resistance 26mΩ(N)/55mΩ(P) @10V drive, lower losses
- Maximum Current 5.3A(N)/-4.9A(P), independent dual-channel load
- Package SOP8, saves PCB area, suitable for high-density integration
- Trench technology, excellent switching performance, stronger avalanche ruggedness
**
Domain and module applications：
- **Half-Bridge/Full-Bridge Drive Circuits** – Utilizes the integrated N+P complementary pair, simplifying circuit layout, suitable for motor drives, inverters, and power converters.
- **DC-DC Buck/Boost Modules** – Acts as a synchronous rectifier or power switch, reducing conduction losses and improving conversion efficiency.
- **Battery Protection Boards** – Dual channels independently manage charge and discharge circuits, quickly cutting off during overcurrent or overvoltage to protect battery safety.
- **Load Switches / Power Path Management** – Enables on/off control of positive and negative voltage rails in portable devices, reducing standby power consumption.
- **Audio Amplifier Output Stages** – Complementary symmetrical structure suitable for push-pull output, providing clear, low-distortion signal amplification.
- **Industrial Sensors / Instrumentation** – Tolerates higher bus voltages, providing stable and reliable switching action for control systems.
- **Power Tools / Robot Motor Control** – Combines high withstand voltage with low on-resistance, enabling high power density designs.
In a nutshell: The AP4523GM-VB is not just a combination of ordinary discrete MOS transistors; it is the efficient "dual-core" choice for your high-voltage compact power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
