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SI4567DY-T1-E3-VB Product details
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Struggling with complex high and low voltage hybrid power management circuit design and component selection? Let VBsemi SI4567DY-T1-E3-VB solve your problems! This SOP8 packaged complementary Dual N+P power MOSFET integrates N-MOS and P-MOS into one, simplifying PCB layout and saving board space. The ±60V withstand voltage level combined with Trench technology achieves low on-resistance and high switching speed. The N-channel handles a maximum current of 5.3A, and the P-channel handles -4.9A, easily handling various push-pull, half-bridge, and battery management applications, making it a "dual-channel weapon" for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
Withstand Voltage: ±60V (N+P dual channel, covering industrial and automotive wide voltage scenarios)
Drive Range: ±20V (Compatible with 3.3V/5V/12V drive, logic level direct drive worry-free)
Threshold Voltage: N-channel 1.8V / P-channel -1.7V (Reliable triggering with low-voltage control signals)
Ultra-Low On-Resistance: N-channel 26mΩ @10V, P-channel 55mΩ @10V (Low conduction losses, low heat generation)
Current Capability: N-channel 5.3A / P-channel -4.9A (Dual output, balanced and reliable)
Package: SOP8 (Standard SMD, suitable for high-density power boards)
Technology: Trench (Low switching losses, fast response)
Domain and module applications：
- Seven Hot Scenarios, One Chip Solves All
Push-Pull and Half-Bridge Circuits: N+P complementary integration simplifies drive design, enabling efficient DC-AC inversion
Battery Charge/Discharge Management: Dual channels independently control charge and discharge circuits, protecting battery cells, extending lifespan
Motor Drive: Micro DC motor forward/reverse control, smooth speed regulation, timely stall protection
Power Conversion: Synchronous rectification or load switches in buck-boost topologies, improving overall system efficiency
Automotive Electronics: In-vehicle chargers, light control, ample voltage margin, adapting to wide temperature and vibration environments
Industrial Control: PLC, sensor interface signal switching, low on-resistance reduces heat accumulation
LED Drive: Constant current dimming control, flexible dual-channel configuration, stable brightness without flicker
SI4567DY-T1-E3-VB - Two transistors in one, flexible and efficient, making your power design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
