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SI4565DY-T1-E3-VB Product details
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The VBsemi SI4565DY-T1-E3-VB is a Dual N+P channel field-effect transistor belonging to the VBsemi brand product series. This product integrates N-channel and P-channel MOSFETs in the same package, offering high performance and high reliability, suitable for various power control and regulation applications. Manufactured using Trench technology, it features a drain-source voltage (VDS) of ±60V and operates within a gate-source voltage (VGS) range of ±20V. The product uses an SOP8 package, suitable for applications requiring compact design and dual-channel power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Configuration: Dual N+P Channel
- Drain-Source Voltage (VDS): ±60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.8V (N-channel) / -1.7V (P-channel)
- On-Resistance (VGS=4.5V): 29mΩ (N-channel) / 60mΩ (P-channel)
- On-Resistance (VGS=10V): 26mΩ (N-channel) / 55mΩ (P-channel)
- Maximum Drain Current (ID): 5.3A (N-channel) / -4.9A (P-channel)
- Technology: Trench
Domain and module applications：
1. Synchronous Buck-Boost Converters: The dual-channel complementary characteristics of the SI4565DY make it very suitable for synchronous Buck-Boost converters, enabling high-density, high-efficiency power conversion design.
2. Battery Charge/Discharge Management: In battery protection and management systems, the N-channel and P-channel can be used for switch control of the charge and discharge circuits respectively, simplifying the circuit and improving system safety.
3. Bridge Drive Circuits: Suitable for half-bridge or full-bridge topologies in small motor drives, fan control, etc. The complementary N+P channels enable logic level drive, reducing peripheral circuit complexity.
4. Load Switches and Power Distribution: In consumer electronics, industrial control, etc., it can be used for switching and load distribution of multiple power rails, offering low on-resistance and high current carrying capability.
5. DC-DC Module Power Supplies: As a synchronous rectifier or main switching transistor, suitable for wide input voltage DC-DC modules, helping to improve conversion efficiency and reduce module size.
6. Automotive Auxiliary Electronic Systems: Can be used in automotive power management, light drives, body control modules, etc., meeting the stability and temperature characteristics requirements of automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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