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ME4565-VB Product details

Product introduction:

The VBsemi ME4565-VB is a dual N+P channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using Trench technology, offering high reliability and excellent electrical performance, suitable for various power control and power management applications. Its symmetrical N+P channel configuration provides greater design flexibility, particularly suitable for circuits requiring positive and negative voltage control or bridge topologies. The product uses an SOP8 package, combining good thermal performance with compact mounting dimensions, suitable for high-density PCB layouts.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±60V 1.8/-1.7V 5.3/-4.9A 29/60(mΩ) 26/55(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±60V 1.8/-1.7V 5.3/-4.9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±60V 1.8/-1.7V 5.3/-4.9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P MOS

- Configuration: Dual-N+P
- Drain-Source Voltage (VDS): ±60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.8V (N-ch) / -1.7V (P-ch)
- On-Resistance (VGS=4.5V): 29mΩ (N-ch) / 60mΩ (P-ch)
- On-Resistance (VGS=10V): 26mΩ (N-ch) / 55mΩ (P-ch)
- Maximum Drain Current (ID): 5.3A (N-ch) / -4.9A (P-ch)
- Technology: Trench

Domain and module applications:


1. Full-Bridge/Half-Bridge Drive Circuits: The N+P complementary configuration of the ME4565-VB makes it very suitable for full-bridge or half-bridge topologies, such as motor drives, inverters, and synchronous rectification circuits in switching power supplies, simplifying design and improving conversion efficiency.
2. DC-DC Converters: In buck-boost and flyback DC-DC converters, this device can be used for power switches and rectification stages. Its low on-resistance and fast switching characteristics effectively reduce losses and increase power density.
3. Battery Charge/Discharge Management: In battery protection boards and charge management modules, the ME4565-VB can serve as a bidirectional switch in the charge/discharge circuit, controlling positive and negative voltage paths, ensuring battery safety and extending lifespan.
4. Audio Amplifiers: Utilizing the symmetry of N+P channels, this product can be used in complementary push-pull circuits for audio output stages, providing stable current output and low distortion performance, suitable for portable speakers and amplifier modules.
5. Motor Drive Modules: Suitable for drive control circuits of small DC motors, stepper motors, or fans. It can precisely control motor speed and direction via PWM signals while maintaining low on-state losses.
6. Power Polarity Protection and Switching: This device can be used in power management circuits requiring bipolar control, such as load switches, power reverse polarity protection, and power path switching, ensuring stable system operation under various power supply conditions.
7. Industrial Control and Automation: In industrial control modules such as PLCs, sensor interfaces, and actuator drives, the ME4565-VB provides reliable switching performance, adapting to wide voltage ranges and harsh operating environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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