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AP4565GM-VB Product details
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**The AP4565GM-VB is a Dual N+P complementary MOSFET optimized for medium and low voltage power switching applications. Utilizing Trench technology, it balances low switching losses with high reliability. The SOP8 package achieves a good balance between thermal resistance and board space, integrating N-MOS and P-MOS on a single chip to simplify circuit design and reduce component count. The combination of ±60V withstand voltage, 5.3A (N) / -4.9A (P) current capability, and low on-resistance makes it an ideal choice for half-bridge, synchronous rectification, and battery management applications, especially suitable for high-density, high-reliability industrial and consumer power systems.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- **VDS=±60V**: Suitable for 12V/24V/36V systems, with ample voltage margin to effectively absorb switching spikes and reduce avalanche breakdown risk.
- **VGS=±20V**: Compatible with 3.3V~12V logic levels, can be driven directly by MCU/PMIC, simplifying peripheral drive circuits.
- **Vth=1.8V (N) / -1.7V (P) Typical**: Enters the fully enhanced region under low-voltage drive, suitable for battery voltage decay scenarios, enhancing low-voltage operation reliability.
- **RDS(on)=26mΩ (N) / 55mΩ (P) @ VGS=10V**: Low conduction loss, controllable temperature rise under full load, conducive to compact layout; static parameters remain excellent at 4.5V drive.
- **ID=5.3A (N) / -4.9A (P)**: Good current matching between complementary pairs, suitable for half-bridge, push-pull, and bidirectional switch topologies.
- **Package SOP8**: Dual-transistor integration saves PCB area, low parasitic parameters, supports higher frequency switching, reduces overall assembly and component costs.
**
Domain and module applications：
- **Half-Bridge and Full-Bridge Converters**: The N+P complementary structure simplifies drive design, suitable for medium and low power inverters, Class-D audio amplifiers, etc.
- **Synchronous Rectification / DC-DC Converters**: Low on-resistance reduces rectification losses, improves heavy-load conversion efficiency, conducive to power module miniaturization.
- **Battery Charge/Discharge Protection Circuits**: Dual-transistor integration enables independent control of charge and discharge paths, microsecond switching response, low internal resistance reduces self-heating of the protection board.
- **Motor Drive Modules**: Complementary output can directly drive small DC motors/stepper motors, low PWM switching losses, smoother operation.
- **Load Switches and Power Path Management**: The combination of N and P transistors supports positive/negative logic control, suitable for complex multi-rail switching scenarios.
- **Industrial Sensors and Instrumentation**: ±60V withstand voltage adapts to industrial bus or power fluctuation environments, wide operating temperature range enhances system reliability.
**Selection Summary**
The AP4565GM-VB achieves a balance between dual-transistor integration, voltage margin, and on-resistance, making it a cost-effective general-purpose choice for 60V medium and low voltage complementary switching applications, particularly suitable for power and motor control projects with strict requirements on space, thermal dissipation, and component count.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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