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AP4521GEM-VB Product details
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The VBsemi AP4521GEM-VB is a Dual N+P-Channel MOSFET manufactured using Trench technology, designed for medium and low voltage power conversion, power management, and load switching scenarios. Its SOP8 package integrates two complementary MOSFETs in a compact size, effectively saving PCB area and simplifying circuit layout, suitable for high-density power modules and portable devices. The device provides stable switching characteristics within a ±60V drain-source voltage range. The complementary N/P channel parameters are well-matched, and the gate drive is compatible with common 5V/10V logic levels, facilitating system integration and bridge topology design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Drain-Source Voltage (VDS): ±60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): N-channel 1.8V (typical), P-channel -1.7V (typical)
- On-Resistance (VGS=4.5V): N-channel 29mΩ (typical), P-channel 60mΩ (typical)
- On-Resistance (VGS=10V): N-channel 26mΩ (typical), P-channel 55mΩ (typical)
- Maximum Drain Current (ID): N-channel 5.3A, P-channel -4.9A
- Package Type: SOP8
- Process Technology: Trench
Domain and module applications：
1. Half-Bridge/Full-Bridge Drive Circuits: Utilizing the complementary N+P channel pairing characteristics, simplifies the power stage design of motor drives, inverters, and switching power supplies, suitable for small DC motors, fans, and water pumps.
2. Synchronous Buck Converters: N-channel used as high-side switch, P-channel used as low-side switch, achieving efficient synchronous rectification, suitable for DC-DC step-down modules and board-level power conversion.
3. Lithium Battery Charge/Discharge Management: The dual MOSFETs can form a load switch or charging protection path, working with a control IC to achieve overcurrent, overvoltage, and reverse polarity protection, enhancing battery pack safety.
4. Load Switching and Power Path Management: In portable devices and industrial control boards, it enables intelligent on/off and power distribution for multiple power sources, with low on-resistance reducing system losses.
5. Signal Level Shifting and Analog Switches: The complementary channels can be applied in logic level shifting, analog signal switching, and sample-and-hold circuits, meeting low-voltage control needs.
6. Vehicle Auxiliary Power Supplies: Used in voltage regulation modules, sensor power supplies, and infotainment system power management within 12V vehicle networks, withstanding wide voltage fluctuations for stable operation.
7. LED Drivers and Constant Current Control: Working with PWM dimming circuits, it achieves efficient constant current drive for low-voltage LED strips, automotive lights, and indicator lights, suppressing current ripple.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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