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SQD45P03-12-GE3-VB Product details
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Are you designing a high-power-density power module where the battery side needs to withstand a continuous current of up to 60A while keeping conduction losses to a minimum? Ordinary P-channel MOS transistors either have high on-resistance or limited package heat dissipation. The VBsemi SQD45P03-12-GE3-VB is designed for this – it integrates -30V voltage rating, -60A current capability, and only 11mΩ on-resistance into the mature TO252 package, allowing high-current P-channel switch design without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 13(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | MOS |
Voltage Rating -30V, meets reverse protection and switching applications for low-voltage systems
Gate Drive Range ±20V, compatible with various drive levels
Threshold Voltage -2.5V, adapts to standard logic drive
On-Resistance 11mΩ (-10V drive) / 13mΩ (-4.5V drive), extremely low loss
Maximum Current -60A, capable of handling high-power load switching
Trench technology, excellent figure of merit
Domain and module applications：
Battery Discharge Circuit / Power Reverse Polarity Protection – As the main switch, extremely low on-resistance effectively reduces voltage drop and temperature rise, extending battery life.
Motor Drive / Power Tools – Utilizing -60A high current capability and low conduction loss to support smooth operation of high-power motors.
Load Switch / Power Management – Achieves efficient on/off control in the -30V voltage domain, simplifying circuit design and improving system reliability.
DC-DC Synchronous Rectification – Replaces high-loss Schottky diodes, improves conversion efficiency, and enhances thermal performance.
Charging Pile / Energy Storage Equipment – Withstands high current surges, providing solid protection for high-power paths.
Automotive Electrical Control – Tolerates vehicle voltage fluctuations, meeting high-current switching and protection requirements.
In a nutshell: The SQD45P03-12-GE3-VB is not just an ordinary P-channel MOS transistor; it is your "low-loss switching expert" and "power champion" for low-voltage, high-current power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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