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SQD50P03-07-GE3-VB Product details
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You are designing a high-power battery management system. You need to achieve low-loss power path switching on a compact PCB while also handling current surges up to 60A. Ordinary P-channel MOSFETs either have high on-resistance, leading to severe heat generation, or are too large, consuming precious layout space. The VBsemi SQD50P03-07-GE3-VB is designed for this exact scenario – it packs -30V withstand voltage, -60A current carrying capacity, and an on-resistance as low as 11mΩ into the robust TO252 package, making high-current power control both efficient and worry-free.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 13(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | MOS |
Withstand Voltage -30V, meeting reverse polarity and transient protection requirements for low-voltage systems
Gate Drive Range ±20V, compatible with wide-range drive signals, offering more flexible control
Threshold Voltage -2.5V, typical P-channel turn-on characteristic, facilitating circuit design
On-Resistance 11mΩ (at 10V drive), 13mΩ (at 4.5V drive), extremely low losses, less heat generation
Maximum Current -60A, capable of handling high-power load switches and battery circuit management
Trench technology, excellent switching performance and conduction characteristics
Domain and module applications：
Battery Protection Board / BMS – Serves as the main charge/discharge switch, low internal resistance effectively reduces voltage drop and temperature rise, extending battery life and range.
Power Path Management / Load Switch – Utilizes P-channel high-side switch characteristics to achieve low-loss power on/off control, suitable for industrial control and communication equipment.
Motor Drive Module – Handles high current transient surges, providing stable power output for DC motors and power tools.
Inverter / Uninterruptible Power Supply – In low-voltage side synchronous rectification or battery switching circuits, improves overall system efficiency.
Automotive Electronics – Tolerates battery voltage fluctuations, providing reliable on/off protection for in-vehicle infotainment, navigation, and auxiliary power supplies.
Electric Bicycles / Energy Storage Devices – Maintains extremely low losses and stable thermal performance in high current charge/discharge scenarios, improving overall equipment reliability.
One-sentence summary: The SQD50P03-07-GE3-VB is a P-channel power MOSFET truly born for low-voltage, high-current applications – it carries 60A of current in its robust TO252 package, suppresses losses with an ultra-low 11mΩ on-resistance, and is the "power gatekeeper" for your high-reliability power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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