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NDD02N60Z-1G-VB Product details

Product introduction:

The NDD02N60Z-1G-VB is a high-voltage, low-power N-channel MOSFET in a TO251 package, with a 650V withstand voltage and 2A current capability. Designed with Planar technology, it features a typical on-resistance of 4300mΩ (at 10V drive), suitable for high-voltage switching and light-load high-efficiency scenarios. The gate drive range is wide at ±30V, compatible with various control circuits, ensuring high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 2A 4300(mΩ) Planar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 2A Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 2A Planar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N MOS

Withstand Voltage: 650V
Drive Voltage: ±30V
Threshold Voltage: 3.5V
On-Resistance (10V drive): 4300 mΩ
Maximum Current: 2A
Package: TO251
Technology: Planar

Domain and module applications:


Switching Power Supplies → High-voltage switching, stable and reliable
AC-DC Converters → High-voltage rectification, low losses
LED Lighting Drivers → Constant current control, longer lifespan
Adapters and Chargers → High efficiency, low temperature rise
Industrial Control Auxiliary Power Supplies → High withstand voltage, surge resistant
Low-Power Inverters → High-voltage buffering, safe isolation
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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