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BSC160N10NS3GATMA1-VB Product details
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Are you designing a high-power motor drive or industrial power module and need to handle 100V high voltage and 30A high current switching within limited board space? Ordinary MOSFETs either lack sufficient voltage rating or have high conduction losses, forcing heatsinks to grow larger and larger. VBsemi BSC160N10NS3GATMA1-VB is designed for this – based on advanced SGT technology, it integrates a 100V voltage rating, 30A current capability, and an ultra-low on-resistance of 18mΩ into a compact DFN8(5X6) package, allowing high power density designs without compromising on heat or size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 1.8V | 30A | 22(mΩ) | 18(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 1.8V | 30A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 1.8V | 30A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
- Voltage Rating 100V, covering 48V systems and various industrial bus applications
- Gate Drive Range ±20V, compatible with 4.5V~12V logic drive
- Threshold Voltage 1.8V, can be directly turned on by low-voltage control signals
- On-Resistance 22mΩ (4.5V drive) / 18mΩ (10V drive), lower losses, higher efficiency
- Maximum Current 30A, the small DFN8 package can still handle high current
- Utilizes SGT process, excellent switching characteristics, better EMI performance
Domain and module applications：
- Motor Drives / Drone ESCs – As H-bridge or three-phase bridge power transistors, handling 100V bus voltage, low on-resistance reduces heat generation, improving endurance and response speed.
- Synchronous Rectification DC-DC Converters – Replaces Schottky diodes in 48V input, 12V/5V output buck modules, improving conversion efficiency by 2-3%.
- Battery Charge/Discharge Management / Lithium Battery Protection – The 100V voltage rating meets the protection needs of 20S and below series battery packs. Microsecond shutdown capability reliably interrupts overcurrent or short-circuit paths.
- Power Tools and Industrial Controllers – Adapts to 60V~90V operating voltage platforms, withstands stall high-current surges, stable and reliable.
- On-board DC-DC / Auxiliary Power Supplies – Withstands automotive load dump transient voltages, providing a stable power path for sensors and ECUs.
- High-Power LED Lighting Drivers – Acts as a constant current switch, achieving high-precision control with PWM dimming, flicker-free, low losses.
- Server Power Supplies / Communication Power Supplies – Utilizes the low gate charge and low on-resistance of the SGT process to balance efficiency and temperature rise in high-frequency hard-switching topologies.
One Sentence Summary: The BSC160N10NS3GATMA1-VB is not an ordinary MOSFET; it is the "power density expert" and "efficiency champion" for your 100V high-voltage, high-current power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
