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FDB035N10A-VB Product details

Product introduction:

The FDB035N10A-VB is a high-current, low-loss N-Channel Power MOSFET in a TO263 package, featuring a 100V voltage rating and 140A current capability. Leveraging Trench technology, it achieves an ultra-low on-resistance of 4mΩ (10V drive), resulting in minimal heat generation and exceptional efficiency. The flexible gate drive (±20V range) makes it suitable for various industrial and power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 3V 140A 4(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 3V 140A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 3V 140A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N MOS

Voltage Rating: 100V
Gate Drive Voltage: ±20V
Threshold Voltage: 3V
On-Resistance (10V drive): 4 mΩ
Maximum Current: 140A
Package: TO263

Domain and module applications:


Switching Power Supplies, DC-DC Converters → Synchronous Rectification, Excellent Efficiency
Motor Drive and Control → High Current Handling, Fast Speed Response
Battery Protection and BMS → Low On-Resistance, Reliable Safety Shutdown
UPS and Inverters → High Voltage Rating, High Reliability Power Supply
Automotive Electronics and On-board Power → Impact Resistance, High Temperature Tolerance, Stable Output
Industrial Power Supplies, Power Tools → High Power Density, Low Thermal Stress
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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