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SiHP22N60E-E3-VB Product details
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**Are you designing a high-power switching power supply or industrial power conversion system that needs to withstand high voltage and high current while controlling losses and temperature rise? Ordinary high-voltage MOS transistors often have high on-resistance, leading to severe heat generation, or insufficient switching speed, dragging down system efficiency. VBsemi SiHP22N60E-E3-VB is designed for this purpose – it utilizes SJ_Multi-EPI superjunction technology, achieving 600V withstand voltage, 20A continuous current, and an on-resistance of only 160mΩ in a TO220 package, allowing high-voltage, high-power designs without compromise.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | MOS |
- Voltage Rating 600V, meeting safety margins for high-voltage applications
- Gate Drive Range ±30V, compatible with common drive circuits
- Threshold Voltage 3.5V, making drive design more robust
- On-Resistance 160mΩ (at 10V drive), lower conduction losses
- Maximum Current 20A, TO220 package for better heat dissipation
- Superjunction Multi-Epitaxial Technology (SJ_Multi-EPI), optimizing the balance between on-resistance and switching performance
**
Domain and module applications：
- Switching Power Supplies / Charging Pile Modules – As the main high-voltage switching transistor, significantly reducing conduction losses and improving overall system efficiency.
- Industrial Motor Drives – Withstands high-voltage bus fluctuations, providing stable and reliable high-current switching capability.
- Photovoltaic Inverters – Utilizes low on-resistance and high-voltage characteristics to reduce power stage heat generation and improve inverter conversion efficiency.
- High-Voltage DC-DC Converters – Excels in PFC or LLC topologies, achieving efficient energy conversion.
- Uninterruptible Power Supplies (UPS) – Handles the main power switching task, combined with TO220 package and low RDS(on), enhancing system reliability during long-term operation.
- Welding Machines / Cutting Power Supplies – Coping with frequent impact loads, the superjunction structure provides robust avalanche ruggedness.
**One Sentence Summary: SiHP22N60E-E3-VB is not just an ordinary high-voltage MOS transistor; it is the "efficiency engine" and "reliable cornerstone" for your high-voltage, high-power power supply designs.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
