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SQD50P08-28-T4-GE3-VB Product details

Product introduction:

The SQD50P08-28-T4-GE3-VB is a Single P-MOSFET deeply optimized for low-voltage power switching applications. The Trench technology balances low switching losses with high reliability, and the TO252 package achieves a good balance between heat dissipation capability and soldering process compatibility. The combination of -60V voltage rating, -50A current capability, and 20mΩ on-resistance makes it an ideal cost-effective incremental option for replacing traditional DPAK or SOP-8 packaged devices, especially suitable for medium-to-high-power, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -50A 25(mΩ) 20(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P MOS

VDS=-60V: Suitable for 12V/24V/48V systems, providing ample margin for negative voltage spikes, reducing the risk of avalanche breakdown.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to MCU/PMIC, eliminating the need for level-shifting circuits.
Vth=-1.7V (typical): Can enter the fully enhanced region even with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=20mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, can reduce the required heat sink copper area; 25mΩ at 4.5V drive still maintains excellent performance.
ID=-50A: Ample continuous current margin to handle peak demands of most automotive and industrial auxiliary loads.
Package TO252: Low thermal resistance, strong overcurrent capability, compatible with standard SMT assembly, balancing power density and production yield.

Domain and module applications:


Power Management: Low on-resistance improves efficiency in negative voltage buck/boost converters, reducing system heat generation. Suitable for server and telecom power auxiliary circuits.
Battery Protection Modules: Fast response ensures quick shutdown during overcurrent/short circuit. Low on-resistance reduces self-heating of the protection board. Suitable for high-rate lithium battery packs.
Motor Drives: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise. Suitable for power tools and small appliances.
Load Switches: Suitable for power switches on negative voltage supply rails. Direct logic-level drive simplifies peripheral circuitry, improving system integration.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency by 2~3%, facilitating module miniaturization.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range make it suitable for 12V/24V automotive buses, offering high reliability.

Selection Summary: The SQD50P08-28-T4-GE3-VB achieves a balance between performance margin, package size, and system cost. It is a cost-effective, general-purpose choice for -60V low-voltage P-channel switching applications, particularly suitable for projects with strict power density and thermal dissipation requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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