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2SJ605-Z-VB Product details
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Are you designing a high-power battery management system or motor drive circuit where the negative rail needs to withstand current surges up to 80A while also handling 60V bus voltage fluctuations? Ordinary P-channel MOSFETs either have excessive conduction voltage drop or insufficient heat dissipation capability. The VBsemi 2SJ605-Z-VB is built for this – it combines -60V withstand voltage, -80A current capability, and an ultra-low on-resistance of 19mΩ into the enhanced thermal structure of the TO263 package, making high-current P-channel switch design uncompromising.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | 25(mΩ) | 19(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | MOS |
Withstand Voltage -60V, covering the vast majority of industrial and automotive negative voltage applications
Gate Drive Range ±20V, compatible with 4.5V~12V logic levels
Threshold Voltage -1.7V, reliably turned on with moderate drive voltage
On-Resistance 19mΩ (at 10V drive) / 25mΩ (at 4.5V drive), extremely low losses
Maximum Current -80A, TO263 package combined with low thermal resistance ensures worry-free continuous high current operation
Trench Technology, excellent switching characteristics and conduction performance
Domain and module applications：
Negative Voltage DC-DC Converters – Used as high-side load switches or synchronous rectifiers, significantly reducing conduction losses and improving overall system efficiency.
Motor Drive Modules – Used for P-channel high-side drive in brushed DC motors, handling high current surges reliably and stably.
Battery Protection Boards / Reverse Polarity Protection – With -60V withstand voltage and -80A current capability, quickly disconnects abnormal circuits, protecting the battery and downstream circuitry.
Automotive Power Distribution Units – Withstands automotive voltage transients, providing reliable switch control for high-power headlights, audio systems, or auxiliary devices.
Industrial VFDs / UPS Inverters – Utilizes low on-resistance and high current capability to reduce power stage heat generation, simplifying thermal design.
Portable Power Tools – Maintains low temperature rise under high current discharge scenarios, extending continuous operation time.
Backup Power Systems (BPS) – Achieves low-loss on/off control between the battery pack and load, enhancing overall system efficiency.
In a nutshell: The 2SJ605-Z-VB is not just an ordinary P-channel MOSFET; it is the "power cornerstone" and "efficiency engine" for your high-voltage, high-current negative voltage switch applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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