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IPD90N10S4L-06-VB Product details

Product introduction:

The IPD90N10S4L-06-VB is a Single N-MOS deeply optimized for low to medium voltage power switching scenarios. It utilizes advanced SGT (Split Gate Trench) technology, achieving an excellent balance between on-resistance, switching speed, and reliability. The TO252 (DPAK) package balances heat dissipation capability with ease of mounting, suitable for medium power density applications. The powerful combination of 100V withstand voltage, 85A current capability, and 6mΩ on-resistance makes it a preferred power device for motor drives, power conversion systems, and automotive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 3V 85A 7.7(mΩ) 6(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 3V 85A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 3V 85A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N MOS

VDS=100V: Suitable for 24V/36V/48V/60V systems, providing ample voltage spike margin, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with 3.3V~12V logic level drives, can be flexibly connected to MCUs/gate drivers, simplifying peripheral design.
Vth=3V (typical): Moderate threshold voltage combines noise immunity with good conduction characteristics, suitable for industrial and automotive noisy environments.
RDS(on)=6mΩ @ VGS=10V: Ultra-low on-resistance results in minimal conduction losses under full load, effectively reducing temperature rise and heat sink size.
RDS(on)=7.7mΩ @ VGS=4.5V: Maintains low resistance even with low-voltage drive, supporting direct drive from 5V logic, reducing system power consumption.
ID=85A: Ample continuous current margin to handle high-power load surges and short-term overload demands.
Package TO252: Mature DPAK package, low thermal resistance, good solder process compatibility, easy for mass production.
Technology SGT: Shielded gate structure reduces Miller capacitance, improves switching speed, reduces switching losses, suitable for high-frequency PWM applications.

Domain and module applications:


Brushless DC Motor Drive: Low on-resistance and fast switching characteristics reduce commutation losses, resulting in smoother motor operation and significantly lower controller temperature rise.
DC-DC Converter: Replaces traditional Schottky diodes in synchronous rectification applications, improving heavy-load efficiency by 2-4%, facilitating power module miniaturization.
Power Tools and Garden Machinery: 85A high current capability matches the startup demands of high-power motors; TO252 package facilitates compact handle designs.
Automotive Auxiliary Power Supply: 100V withstand voltage covers 12V/24V vehicle bus transient spikes; wide Safe Operating Area ensures reliability under harsh conditions.
Battery Protection and Charging Management: Low internal resistance reduces self-heating of the protection board; fast turn-off capability enables microsecond-level overcurrent/short circuit protection.
Server and Telecom Power Supplies: High efficiency and high power density characteristics meet the synchronous rectification and hot-swap requirements of 48V bus architectures.
Industrial Control and Automation: Low switching losses from SGT technology suit high-frequency PWM control, improving system dynamic response.

Selection Summary: The IPD90N10S4L-06-VB offers an ultra-low on-resistance of 6mΩ and a high current capability of 85A at the 100V voltage level. Combining the advantages of SGT technology with the practicality of the TO252 package, it is a high-performance, cost-effective power switch choice for motor drives, power conversion systems, and automotive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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