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NVTFS5116PLWFTAG-VB Product details
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The NVTFS5116PLWFTAG-VB is a Single P-MOS deeply optimized for medium and low-voltage power switching scenarios. Its Trench technology achieves an excellent balance between switching speed and conduction losses. The DFN8(3X3) package offers both superior heat dissipation and a compact footprint. The combination of -60V withstand voltage, -11A current capability, and 60mΩ on-resistance makes it a reliable choice for applications such as battery protection, power management, and motor control, especially suitable for projects with dual requirements for voltage margin and package size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -60V | -1.6V | -11A | 75(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -60V | -1.6V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -60V | -1.6V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | MOS |
VDS=-60V: Covers 12V/24V/48V systems, provides ample margin for voltage spikes, suitable for industrial and automotive bus environments.
VGS=±20V: Compatible with a wide range of gate drive voltages, supporting flexible control from 4.5V logic levels to 10V drive.
Vth=-1.6V (typical): Low threshold voltage allows effective turn-on even under low-voltage drive conditions, facilitating system design.
RDS(on)=75mΩ @ VGS=4.5V, 60mΩ @ VGS=10V: Low on-resistance reduces conduction losses, minimizes temperature rise under full load, and improves overall efficiency.
ID=-11A: Ample continuous current margin to handle transient and steady-state demands of most medium-power loads.
Package DFN8(3X3): Dual-sided heat dissipation path enhances thermal performance, low parasitic inductance benefits high-frequency switching, saves PCB area.
Domain and module applications：
Battery Protection Module: P-MOS high-side switch architecture simplifies drive circuitry; low internal resistance reduces self-heating of the protection board; -60V withstand voltage suits multi-cell lithium battery packs.
Power Management System: Reliable turn-off characteristics in negative voltage power path management and reverse polarity protection circuits, reducing system standby losses.
Low-Voltage Motor Drive: Low PWM switching losses ensure smooth motor operation and controllable controller temperature rise, suitable for fan and pump loads.
Industrial Control I/O: Logic level compatibility and wide voltage range make it suitable for PLC outputs, relay drives, and signal isolation circuits.
Automotive Auxiliary Equipment: 60V withstand voltage covers 12V/24V vehicle electrical transient surges; DFN8 package meets compact controller layout requirements.
DC-DC Converter: In negative rail synchronous rectification or load switch applications, low on-resistance improves conversion efficiency and facilitates module miniaturization.
LED Lighting Driver: Low losses in the constant current switching path support multi-channel parallel dimming, enhancing overall luminaire reliability and efficacy.
Selection Summary: The NVTFS5116PLWFTAG-VB achieves a balanced design between withstand voltage, on-resistance, package thermal performance, and drive compatibility. It is a cost-effective general-purpose choice for 60V low-voltage P-MOS switching applications, particularly suitable for systems with strict requirements for voltage margin, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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