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SI7621DN-T1-GE3-VB Product details

Product introduction:

The SI7621DN-T1-GE3-VB is a Single P-MOS optimized for low-voltage power switching scenarios. The Trench technology balances low conduction loss and fast switching characteristics. The DFN8(3X3) package strikes a good balance between thermal performance and board area. The combination of -20V withstand voltage, -15A current carrying capacity, and 16mΩ on-resistance makes it a cost-effective choice for battery-powered systems, load switches, and power management units, especially suitable for high-density, low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -20V -0.6V -15A 20(mΩ) 16(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -20V -0.6V -15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -20V -0.6V -15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P MOS

VDS=-20V: Suitable for 3.7V/5V/12V low-voltage systems, fully covering the voltage requirements of portable devices and board-level power rails, with margin for spikes.
VGS=±8V: Compatible with low-voltage logic level drives, can be used with 1.8V/2.5V/4.5V drive circuits for reliable switching.
Vth=-0.6V (typical): Ultra-low threshold voltage, can effectively enter the on-state even in battery voltage decay scenarios, supporting low-voltage direct drive.
RDS(on)=16mΩ @ VGS=4.5V: Ultra-low on-resistance, significantly reduces conduction loss and temperature rise, improving overall system efficiency.
ID=-15A: Strong continuous current capability, can meet the peak demands of most low-voltage power switches, battery protection, and motor drives.
Package DFN8(3X3): Small size, low parasitic inductance, supports high-frequency switching, while optimizing PCB thermal dissipation and placement density.

Domain and module applications:


Portable Electronic Power Management: Low internal resistance reduces charge/discharge loop loss, extends battery life, small package aids ultra-thin design.
Battery Protection Board: Microsecond-level switching response ensures fast turn-off during overcurrent/short circuit, low conduction voltage drop reduces protection board self-heating.
Low-Voltage Load Switch: Simple negative voltage logic control, can be directly used for peripheral power on/off, extremely low static power consumption.
Motor Drive Circuit: Low PWM switching loss, combined with low on-resistance, makes motor operation smoother and controller temperature rise lower.
DC-DC Converter: Used as synchronous rectifier or reverse polarity protection device, replacing traditional Schottky diodes can improve heavy-load conversion efficiency.
Consumer Electronics Power Path Management: Supports USB power switches, smart sockets, wearable devices, and other high-volume, low-cost applications.
LED Lighting Driver: Reduces power stage loss in low-voltage constant current drives, supports multi-channel parallel connection, improving overall luminaire efficiency and reliability.

Selection Summary: The SI7621DN-T1-GE3-VB achieves an excellent balance between low on-resistance, miniaturized package, and low-voltage control capability. It is a versatile high-performance choice for -20V low-voltage P-MOSFET switching applications, especially suitable for portable and board-level systems with strict space, power, and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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