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FDS9958-F085-VB Product details
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The VBsemi FDS9958-F085-VB is a dual P+P channel field-effect transistor belonging to the VBsemi brand product series. Manufactured using Trench technology, it features low on-resistance, high switching speed, and good thermal stability, making it suitable for various medium-power control and load switching applications. The device is packaged in SOP8, integrating two independent P-channel MOSFETs, which effectively simplifies circuit design and saves PCB space, making it ideal for power and control systems requiring compact layout and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.9V | -4A | 145(mΩ) | 120(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.9V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.9V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | MOS |
- Drain-Source Voltage (VDS): -60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): -1.9V
- On-Resistance (VGS=4.5V): 145mΩ
- On-Resistance (VGS=10V): 120mΩ
- Maximum Drain Current (ID): -4A
- Technology: Trench
Domain and module applications：
1. Load Switch Circuits: FDS9958-F085-VB is suitable for various load switch modules, such as on/off control in power management units. With its dual P-channel configuration and low on-resistance, it effectively reduces system power consumption and improves power supply efficiency.
2. Battery Protection and Charge/Discharge Control: In battery management systems, this device can serve as a switching element in the charge/discharge path to control current direction and protect the battery from short circuits or overcurrent damage, suitable for portable devices and energy storage systems.
3. Reverse Polarity Protection: Due to its negative drain-source voltage characteristics, it can be used in reverse polarity protection circuits at the DC power input to prevent damage to downstream circuits when the power supply is reversed, enhancing system safety and reliability.
4. Low-Voltage Motor Drive Modules: Suitable for drive control circuits of small DC motors or stepper motors, such as fan drives, electric toys, and automation equipment, enabling motor start/stop and speed control.
5. DC-DC Converters: In buck or boost converters, this dual P-channel MOSFET can be used for synchronous rectification or as a switching element, helping to improve conversion efficiency and simplify high-frequency switching circuit design.
6. Consumer Electronics Power Control: Suitable for power distribution and control modules in consumer electronics like smart sockets, USB power management, and audio equipment, supporting logic level drive for easy direct interface with MCUs.
7. Automotive Auxiliary Power Systems: This model meets automotive-grade application requirements (F085) and can be used in auxiliary circuits for automotive infotainment systems, lighting control, and vehicle sensor power management, providing stable and reliable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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