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FDMC7200-VB Product details

Product introduction:

FDMC7200-VB is a Half-Bridge N+N dual N-MOSFET deeply optimized for low-voltage power switching and synchronous rectification applications. Using Trench technology, it achieves a good balance between switching speed, conduction loss, and reliability. The DFN8(3X3)-C package combines a compact footprint with excellent thermal paths, making it suitable for high-density power board designs. The combination of 30V withstand voltage, 35A continuous current capability, and ultra-low 9mΩ on-resistance (@VGS=10V) makes it an ideal power stage choice for high-current applications such as DC-DC converters, motor drives, and battery protection.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3)-C Half-Bridge-N+N 30V 1.7V 35A 16(mΩ) 9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3)-C Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3)-C Half-Bridge-N+N 30V 1.7V 35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3)-C Half-Bridge-N+N 30V 1.7V 35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3)-C Half-Bridge-N+N MOS

VDS=30V: Suitable for 5V/12V/24V systems, providing ample voltage margin for switching spikes and reducing avalanche failure risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be driven directly by MCU/PWM controllers, simplifying peripheral circuitry.
Vth=1.7V (typical): Can be effectively turned on with low-voltage drive, meeting the needs of battery-powered and wide voltage input scenarios.
RDS(on)=9mΩ @ VGS=10V / 16mΩ @ VGS=4.5V: Extremely low on-resistance, significantly reducing full-load losses, improving conversion efficiency, and lowering temperature rise.
ID=35A: Ample continuous current capability, suitable for high power density applications, capable of handling transient peak currents such as motor stall or battery short circuit.
Half-Bridge Configuration: Integrates two N-MOSFETs in a DFN8(3X3)-C package, simplifying half-bridge circuit layout, reducing parasitic inductance, and improving high-frequency operational stability.
Trench Technology: Optimizes gate charge and switching characteristics, balancing low switching losses with low EMI risk under high-frequency PWM.

Domain and module applications:


DC-DC Converters: As a synchronous rectifier or half-bridge power stage, the 9mΩ low on-resistance significantly improves heavy-load efficiency, suitable for servers, communication power supplies, and automotive DC-DC converters.
Low-Voltage Motor Drives: Half-bridge integration saves PCB area, low conduction and switching losses make motor operation smoother, and controller heat generation is significantly reduced.
Battery Protection Modules: 35A high current capability and milliohm-level on-resistance reduce self-consumption of the protection board, and fast shutdown response enhances overcurrent/short-circuit protection reliability.
Power Management Units (PMUs): The DFN8(3X3)-C package is suitable for portable devices and miniaturized modules, with 30V withstand voltage compatible with multi-cell lithium batteries and USB-PD applications.
Wireless Charging / Fast Charging Circuits: The half-bridge topology combined with Trench technology supports high-frequency operation, improving power transfer efficiency and reducing temperature rise.
Automotive Auxiliary Power Supplies: Wide gate voltage range and 30V withstand voltage adapt to 12V automotive buses, meeting surge and load dump requirements with high reliability.
Power Tools and Industrial Controls: 35A continuous current and low thermal resistance package can handle high-load continuous output, extending device operating life.

Selection Summary: FDMC7200-VB achieves an excellent balance between on-resistance, current capability, half-bridge integration, and package thermal performance. It is a cost-effective choice for 30V low-voltage, high-current power switching and half-bridge topology applications, especially for projects with strict requirements for efficiency, power density, and heat dissipation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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