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FDMC8200S-VB Product details
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The FDMC8200S-VB is a Half-Bridge N+N dual N-MOSFET deeply optimized for low-voltage power switching and synchronous rectification applications. The Trench technology ensures extremely low switching losses and high reliability, while the DFN8(3X3)-C package achieves an ideal balance between thermal performance and board space. The combination of 30V voltage rating, 35A current capability, and 9mΩ on-resistance makes it a preferred device for high-density power modules, motor drives, and battery protection applications, especially suitable for systems with stringent thermal and space requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | 16(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | MOS |
VDS=30V: Suitable for 5V/12V/24V systems, provides ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, saving level-shifting circuits.
Vth=1.7V (Typical): Ensures full conduction region even under low-voltage drive, particularly suitable for battery voltage decay scenarios.
RDS(on)=9mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces temperature rise under full load, can reduce required copper area for heat dissipation; RDS(on) is 16mΩ at VGS=4.5V, supporting low-voltage logic drive.
ID=35A: Ample continuous current margin to handle transient high-current scenarios like motor stall and power supply surges.
Integrated Half-Bridge N+N Structure: Two MOSFETs share the bridge leg, simplifying PCB layout, reducing parasitic inductance, and enhancing high-frequency switching performance.
Package DFN8(3X3)-C: Small size, low thermal resistance, low parasitic parameters, supports high-frequency switching while saving PCB area and assembly costs.
Domain and module applications：
DC-DC Converters: Half-bridge structure is naturally suited for synchronous Buck or Boost; 9mΩ ultra-low on-resistance significantly improves heavy-load efficiency, facilitating module miniaturization.
Battery Protection Modules: 35A high current handling capability and microsecond-level switching response ensure reliable shutdown during overcurrent/short circuit; low on-resistance reduces self-heating of the protection board.
Low-Voltage Motor Drives: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise; half-bridge configuration facilitates driving brushed motors or acting as half of a full bridge.
Portable Device Power Management: Low on-resistance improves boost/buck efficiency, extending battery life; small package aids ultra-thin design.
Consumer Electronics Control Modules: Direct drive by logic levels simplifies peripheral circuits, suitable for high-volume, low-cost products like smart sockets, USB switches, and electronic loads.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power loss, supports multi-channel parallel connection, improving overall luminaire efficacy.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range suit 12V automotive bus; half-bridge structure can be used for driving loads like water pumps and cooling fans.
Selection Summary: The FDMC8200S-VB achieves an excellent balance between on-resistance, current capability, half-bridge integration, and package size. It is a cost-effective, general-purpose choice for 30V low-voltage half-bridge switching applications, particularly suitable for projects with strict requirements on power density, thermal management, and system cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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