中文
English
FDMC7208S-VB Product details
Back to previous pageProduct introduction：
Still troubled by the large board area and high conduction losses of half-bridge driver circuits? Let VBsemi FDMC7208S-VB solve your worries! This half-bridge dual N-MOSFET in a DFN8(3X3)-C package integrates two Trench process MOSFETs. Despite its compact 3mm×3mm size, it can handle a high current of 35A, with an ultra-low on-resistance of 9mΩ at 10V drive, significantly reducing heat generation compared to similar devices. With a 30V voltage rating and a wide ±20V gate drive range, it easily covers high-frequency applications like power management and motor drives, making it an engineer's 'dual-transistor weapon'.
File download
Download PDF document
Download now
-C.png)
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | 16(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | MOS |
- Configuration: Half-Bridge Dual N-MOS (Half-Bridge-N+N)
- Voltage Rating: 30V (Adequate safety margin)
- Gate Drive Range: ±20V (Compatible with 3.3V/5V/12V drives)
- Threshold Voltage: 1.7V (Can be directly driven by low-voltage logic)
- Ultra-Low On-Resistance: 9mΩ @ 10V; 16mΩ @ 4.5V (Extremely low conduction losses)
- High Current Capability: 35A (Even more powerful when paralleled)
- Package: DFN8(3X3)-C (Suitable for high-density mounting, excellent heat dissipation)
- Technology: Trench (Fast switching, low losses)
Domain and module applications：
– Six Popular Scenarios, one solution handles them all
- Synchronous Rectification: DC-DC converters, server power supplies, significant efficiency improvement
- Motor Drives: Fans, pumps, power tools, directly driven by half-bridge structure
- Battery Protection: Dual N-MOS in series, effectively cuts off overcharge/overdischarge current
- Power Inverters: UPS, micro photovoltaic inverters, stable high-frequency switching
- Load Switches: Hot-swap, power path management, low voltage drop
- Automotive Electronics: Lighting control, auxiliary power, reliable vibration and temperature resistance
FDMC7208S-VB – Two transistors in one, small size, high power, making your half-bridge design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
