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STD100N10F7-VB Product details

Product introduction:

The STD100N10F7-VB is a Single N-MOSFET optimized for medium-voltage power switching applications. Utilizing SGT (Shielded Gate Trench) technology, it achieves an excellent balance between on-resistance, switching speed, and reliability. The TO252 (DPAK) package balances thermal dissipation with mounting compatibility. The combination of 100V voltage rating, 55A current capability, and 11.5mΩ on-resistance makes it an ideal power switch option for medium-voltage applications such as telecom power supplies, industrial controls, and automotive electronics, particularly suited for high-reliability, high-power-density designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 55A 11(mΩ) 8(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 55A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 55A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N MOS

VDS=100V: Suitable for 24V/48V/60V systems, covering a wide range of bus voltages, providing ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with 4.5V~12V drive levels, flexibly adaptable to MCUs, gate driver ICs, and PMICs, simplifying driver circuit design.
Vth=1.8V (Typical): Lower threshold voltage ensures full conduction under low-voltage drive while maintaining good noise immunity, balancing logic drive and safety margin.
RDS(on)=11.5mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces conduction losses, keeps temperature rise manageable under full load, potentially reducing heatsink size or copper area.
RDS(on)=14.5mΩ @ VGS=4.5V: Maintains low impedance characteristics even under low-voltage logic drive, supporting 4.5V drive scenarios, enhancing system flexibility.
ID=55A: Ample continuous current margin to handle transient high-current demands like motor startup and capacitive load inrush, ensuring high reliability.
Package TO252: Mature DPAK package with low thermal resistance and good soldering process compatibility, suitable for automated mass production while ensuring a good thermal path.

Domain and module applications:


Telecom Power Supplies & Base Station Power: 100V voltage rating combined with low on-resistance, suitable for AC-DC rectification and DC-DC conversion stages, improving full-load conversion efficiency.
Motor Drives & Power Tools: SGT technology reduces switching losses, leading to lower temperature rise under high-frequency PWM operation, aiding controller miniaturization and long-life design.
Automotive Electronics & Body Control: Wide voltage tolerance suits 12V/24V vehicle electrical systems, can withstand load dump and transient overvoltage, offering high reliability.
Battery Protection & Power Management: Low on-resistance reduces self-heating on the protection board; fast switching characteristics support microsecond-level response to overcurrent/short circuits.
Industrial Control & PLCs: High current margin and low conduction losses suitable for driving solenoids, relays, and various power interface circuits.
DC-DC Synchronous Rectification: Replaces traditional Schottky diodes, significantly improving heavy-load efficiency, especially suitable for 48V bus architecture server power supplies.
Photovoltaic Inverters & Energy Storage Systems: 100V voltage rating covers multi-stage MPPT buses; low impedance reduces power losses, enhancing overall system yield.

Selection Summary: The STD100N10F7-VB achieves a cost-effective balance between voltage rating, on-resistance, current capability, and package compatibility. It is a high-reliability, general-purpose choice for 100V medium-voltage switching applications, especially suitable for power systems with strict requirements on loss, temperature rise, and overvoltage capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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