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IPG20N04S4L-07-VB Product details
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Still struggling with heat generation and package size for high-current power paths? The VBsemi IPG20N04S4L-07-VB dual N-MOSFET offers a high-density solution! Featuring a compact DFN8(5X6)-B package integrating dual N+N channels, it boasts a single-device rated current of up to 60A and an ultra-low on-resistance of 5.5mΩ @ 10V, resulting in excellent thermal performance. The Trench technology delivers faster switching speeds and lower losses. With a 40V withstand voltage covering automotive electronics, industrial control, and high-performance power systems, it is the "dual-channel efficiency tool" for power designers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | 6.5(mΩ) | 5.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
Withstand Voltage: 40V (meets medium/low voltage system requirements with ample margin)
Drive Range: ±20V (compatible with 4.5V/10V/12V drives)
Turn-on Threshold: 3.1V (logic level drive friendly)
Ultra-Low Resistance: 5.5mΩ @ 10V, 6.5mΩ @ 4.5V (extremely low conduction losses)
High Current Capability: 60A (dual N+N architecture, strong single-device capability)
Package: DFN8(5X6)-B (dual transistor integration, saves board space, suitable for high-density power design)
Technology: Trench (fast switching, low losses, improves system efficiency)
Domain and module applications：
– Six Popular Scenarios, Dual Transistors in Parallel Handle with Ease
Automotive Electronics: Vehicle DC-DC, motor drives, battery management; impact resistant, high temperature tolerant, high reliability
Power Systems: Synchronous rectification, power conversion modules; significantly reduces losses in low-voltage, high-current paths
Battery Protection: Dual-channel independent control, quickly disconnects fault current, protects cell safety
Motor Drives: Fans, pumps, power tools; smooth speed variation, more timely stall protection
Industrial Control: PLC power supplies, servo drives; high-density package adapts to compact control boards
New Energy and Energy Storage: MPPT controllers, inverter auxiliary circuits; efficient heat dissipation, long-term stability
IPG20N04S4L-07-VB – Two transistors combined, worry-free high current, making your power design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
