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IPG20N04S4-12-VB Product details
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The VBsemi IPG20N04S4-12-VB is a Dual-N+N Channel Field Effect Transistor belonging to the VBsemi product series. This product features high current carrying capability and low on-resistance, suitable for various power conversion and load switching applications. It is manufactured using advanced Trench technology, featuring a drain-source voltage (VDS) of 40V and stable operation within a gate-source voltage (VGS) range of ±20V. This product is packaged in DFN8(5X6)-B, suitable for high-density, high-reliability power supply design scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | 6.5(mΩ) | 5.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3.1V
- On-Resistance (VGS=4.5V): 6.5mΩ
- On-Resistance (VGS=10V): 5.5mΩ
- Maximum Drain Current (ID): 60A
- Package: DFN8(5X6)-B
- Technology: Trench
Domain and module applications：
1. **High-Power DC-DC Converters**: The IPG20N04S4-12-VB is suitable for high-efficiency DC-DC conversion modules. Its low on-resistance and 60A high current capability can significantly improve conversion efficiency and reduce power losses.
2. **Power Tools and Motor Drives**: This model can be used in power tools, DC motor controllers, and brushless motor drive modules as a power switching device for high-current on/off control and speed regulation.
3. **Automotive Electronic Systems**: In vehicle power management, body control modules, and auxiliary power circuits, this device provides reliable switching performance and voltage margin, meeting the requirements of 12V/24V automotive electrical environments.
4. **Server and Telecom Power Supplies**: Suitable for rectifier and switching stages in server power supplies and telecom base station power supplies. The dual N+N configuration facilitates implementing synchronous rectification or half-bridge/full-bridge topologies.
5. **Battery Protection and BMS**: In lithium battery protection boards and battery management systems, it can be used as the switch for charge/discharge circuits. The low on-resistance reduces heat generation, extending battery life.
6. **High-Power LED Drivers**: Can be used in high-power LED constant current drive circuits, achieving stable output through PWM dimming or switching control, suitable for high-brightness lighting applications.
7. **Industrial Power Supplies and UPS**: Used as a power switch in industrial switching power supplies, uninterruptible power supplies (UPS), and inverters, meeting the demanding conditions of high voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
