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IPG20N04S4L-11-VB Product details
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Are you designing a high-power-density automotive controller or industrial power module where PCB space is tight, yet it must handle a continuous current of up to 60A? Standard discrete MOS transistors not only take up significant board area but also cause headaches with conduction losses. The VBsemi IPG20N04S4L-11-VB is designed for this exact challenge – it integrates a 40V withstand voltage, 60A current carrying capability, and an ultra-low 5.5mΩ on-resistance into a dual N+N channel DFN8(5X6)-B package, so high-current power supply design no longer requires trade-offs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | 6.5(mΩ) | 5.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Withstand Voltage 40V, meeting the safety margin requirements for low-voltage, high-current applications
- Gate Drive Range ±20V, compatible with 4.5V to 12V logic drives
- Threshold Voltage 3.1V, providing clear switching characteristics and stronger noise immunity
- On-Resistance 5.5mΩ (10V drive) / 6.5mΩ (4.5V drive), extremely low losses, reducing thermal stress
- Maximum Current 60A, dual channels can be paralleled or used independently to handle high-power loads
- Utilizes Trench technology, optimizing switching performance and conduction characteristics
Domain and module applications：
- Automotive Electronics / Body Control Modules – Used as high-current load switches or motor drive stages, reliably handling battery voltage fluctuations and reducing conduction losses.
- Power Tools / Garden Machinery – Enables brushless motor drive in 40V power systems; dual N+N design simplifies H-bridge layout and increases power density.
- Power DC-DC Converters / Synchronous Rectification – Replaces Schottky diodes with extremely low on-resistance, improving conversion efficiency by 2~3%, suitable for high-current output modules.
- Battery Protection Boards / Energy Storage Systems – Quickly disconnects the circuit during overcurrent or short circuit; dual channels can manage charge and discharge circuits separately, protecting cell safety.
- Server / Telecom Power Supplies – Used for hot-swap protection and load switches on high-power boards with 12V input; 60A current capability meets high-density power supply needs.
- Drones / Robotics – The compact DFN8 package and low impedance characteristics are suitable for high-current power path design in space-constrained environments.
In a nutshell: The IPG20N04S4L-11-VB is not just an ordinary dual N-MOSFET; it is the "dual-channel power heart" and "low-loss efficiency engine" for your high-power-density designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
