中文
English
IPG20N04S4L-08-VB Product details
Back to previous pageProduct introduction：
**Are you designing a high-power-density, high-current power supply solution where board-level space is tight, yet it must handle current surges of up to 60A? Traditional MOSFETs either have large packages or suffer from high conduction losses. The VBsemi IPG20N04S4L-08-VB is designed for this exact challenge – it features a dual N+N channel design, integrating a 40V withstand voltage, 60A current carrying capability, and an ultra-low 5.5mΩ on-resistance into the compact DFN8(5X6)-B package, so high-current power conversion is no longer limited by heat dissipation and space.**
File download
Download PDF document
Download now
-B.png)
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | 6.5(mΩ) | 5.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 40V | 3.1V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Withstand Voltage 40V, suitable for low-voltage, high-current scenarios, providing ample safety margin
- Gate Drive Range ±20V, compatible with various drive voltages for flexible use
- Threshold Voltage 3.1V, providing clear switching characteristics and strong noise immunity
- On-Resistance 5.5mΩ (10V drive) / 6.5mΩ (4.5V drive), extremely low conduction losses, effectively reducing temperature rise
- Maximum Current 60A, dual N+N parallel design easily handles high-current loads
- Utilizes Trench technology, excellent figure of merit, stable and reliable switching performance
**
Domain and module applications：
- **High-Current DC-DC Converters** – Used as synchronous rectifiers or power switches, significantly reducing conduction losses and improving overall conversion efficiency.
- **Motor Drive Modules** – Dual N+N configuration suitable for H-bridge or half-bridge topologies; 60A high current capability meets power requirements for power tools, drones, etc.
- **Automotive Electronic Systems** – 40V withstand voltage combined with low impedance characteristics suitable for harsh environments like vehicle power management and body control.
- **Battery Protection Boards / Energy Storage BMS** – Milliohm-level on-resistance reduces voltage drop in the protection loop; high-current charge/discharge without overheating extends battery life.
- **Server Power Supplies / Telecom Power Supplies** – Achieves high-density power conversion within limited PCB area, simplifying thermal design.
- **Power Inverters** – Leveraging the fast switching of Trench technology to reduce switching losses and improve system reliability.
**In a nutshell: The IPG20N04S4L-08-VB is not just an ordinary dual N-MOSFET; it is the "power heart" and "efficiency engine" for your high-current, low-voltage power supply designs.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
