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BSC072N08NS5-VB Product details
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The BSC072N08NS5-VB is a Single N-MOSFET deeply optimized for medium and low voltage, high current power switching applications. It employs advanced SGT (Split-Gate Trench) technology, combining ultra-low on-resistance with excellent switching performance. The DFN8(5X6) package achieves an excellent balance between thermal resistance and footprint. The combination of 80V withstand voltage, 120A current capability, and 4.5mΩ on-resistance makes it an ideal choice for applications such as high power density power supplies, motor drives, and battery protection, especially suitable for system designs with stringent requirements for heat dissipation and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | 4.5(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
VDS=80V: Suitable for 24V/36V/48V systems, sufficient to cover various industrial and automotive bus voltages, providing ample margin for voltage spikes, enhancing system reliability.
VGS=±20V: Compatible with 5V~12V logic level drives, can be directly connected to MCU/PMIC, simplifying gate drive circuit design.
Vth=3V (typical): Moderate threshold voltage, balancing noise immunity and low-voltage drive performance, ensuring reliable turn-on in harsh electromagnetic environments.
RDS(on)=4.5mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing conduction losses and full-load temperature rise, allowing for smaller heatsinks.
ID=120A: Ample continuous current margin, easily handling start-up surges and peak current demands of high-power loads.
Package DFN8(5X6): Low parasitic inductance, excellent thermal conduction path, supports high-frequency switching, saves PCB area, facilitating compact layout.
Domain and module applications：
High-Power DC-DC Converters: Replaces traditional MOSFETs in synchronous rectification applications. The ultra-low on-resistance improves heavy-load efficiency by 2-3%, aiding module miniaturization.
Motor Drive and Control: Low PWM switching losses, 120A high current capability easily drives the power stage, significantly reducing controller temperature rise for smoother operation.
Lithium Battery Protection Boards: 80V withstand voltage and fast turn-off characteristics ensure reliable protection during overcurrent and short circuits. Low internal resistance reduces self-heating of the protection board, extending battery life.
Automotive Power Systems: Strong adaptability to 12V/24V/48V vehicle bus environments. SGT technology ensures high surge current withstand capability, suitable for high-power loads like automotive DC-DC and PTC heaters.
Server and Communication Power Supplies: High efficiency, low thermal resistance package suitable for high power density power modules, meeting reliability requirements for long-term full-load operation.
Industrial Power Tools: Combines high current output capability with a compact package, providing an efficient power stage solution for brushless motor controllers, enhancing overall runtime and power.
Selection Summary: The BSC072N08NS5-VB achieves an excellent balance between withstand voltage, on-resistance, current capability, and package thermal performance. It is a high-performance, versatile choice for 80V medium and low voltage, high current switching applications, particularly suitable for projects with strict requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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