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IPG20N06S4L-26-VB Product details
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The IPG20N06S4L-26-VB is a Dual N+N channel power MOS transistor in a compact DFN8(5X6)-B package, with 60V withstand voltage and 40A high current carrying capacity. Based on Trench technology, it features an on-resistance as low as 11mΩ (10V drive), resulting in low heat generation and high efficiency. The gate drive range is wide at ±20V, offering flexible control and suitability for various power supply and motor drive scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
Withstand Voltage: 60V
Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (4.5V Drive): 17 mΩ
On-Resistance (10V Drive): 11 mΩ
Maximum Current: 40A
Package: DFN8(5X6)-B
Configuration: Dual N+N
Domain and module applications：
DC-DC Converters → Synchronous rectification, low voltage loss, high efficiency output
Motor Drive Modules → High current drive, fast response, low temperature rise
Battery Charge/Discharge Protection → Reliable shutdown, extending battery life
Power Tool Power Supplies → High power density, impact resistant, stable power supply
Automotive Electronic Systems → Good temperature resistance, adapts to wide voltage environments
Power Management Units → Dual transistor integration, saves PCB space, simplifies design
Inverters and UPS → Low on-resistance, improves overall system efficiency
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
