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IPG20N06S4L-11-VB Product details
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Struggling with heat dissipation for high-current switching solutions and the board space occupied by dual-transistor layouts? Let VBsemi IPG20N06S4L-11-VB help you! This DFN8(5X6)-B packaged Dual N+N channel power MOSFET integrates two 60V/40A Trench MOS transistors into one, allowing a single device to replace dual discrete solutions, effectively reducing PCB area. With an on-resistance as low as 11mΩ @ 10V, it maintains extremely low losses even under high current conditions. Combined with the fast switching characteristics of the Trench process, it is a 'dual-core powerhouse' for power conversion, motor drive, and battery protection scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
Voltage Rating: 60V (Suitable for low and medium voltage applications with ample margin)
Drive Range: ±20V (Compatible with 3.3V/5V/10V/12V drive)
Threshold Voltage: 1.7V (Can be directly driven by low-voltage logic)
Ultra-Low On-Resistance: 11mΩ @ 10V, 17mΩ @ 4.5V (Low conduction loss, low heat generation)
High Current Capability: 40A (Single transistor has strong current handling, dual transistors in parallel can be expanded)
Dual Transistor Configuration: Dual-N+N (Flexible application in half-bridge, synchronous rectification topologies, etc.)
Package: DFN8(5X6)-B (Low thermal resistance, suitable for high power density design)
Core Technology: Trench (Fast switching speed, low switching loss)
Domain and module applications：
– Six Typical Scenarios Empowered by Dual Transistors
Synchronous Rectification DC-DC: Integrated dual N-channel simplifies the construction of high-efficiency synchronous buck/boost circuits
Motor Drive: Suitable for BLDC/brushed motor control in power tools, fans, pumps, etc.
Battery Protection and Charge/Discharge Management: Dual-channel design enables independent charge and discharge control for more reliable protection
Automotive Power Systems: 60V withstand voltage handles 12V/24V/48V automotive bus bars, strong surge resistance
Server/Telecom Power Supplies: Low on-resistance reduces high-current losses, improving power conversion efficiency
Power Multiplexing: Dual transistor isolation design for load switches, power selection circuits, saving space
IPG20N06S4L-11-VB – Dual transistors combined, efficient and worry-free, providing a more compact and reliable solution for your power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
