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NVMFD5C674NLT1G-VB Product details
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The NVMFD5C674NLT1G-VB is a Dual N+N MOSFET deeply optimized for low-voltage power switching scenarios. The Trench process balances low switching losses with high reliability, and the DFN8(5X6)-B package achieves an ideal balance between thermal performance and board space. The combination of 60V withstand voltage, 40A current carrying capacity, and 11mΩ ultra-low on-resistance makes it a preferred alternative to traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current, high-reliability power supply and motor control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
VDS=60V: Suitable for 12V/24V/36V/48V systems, providing ample voltage margin to effectively reduce the risk of peak avalanche breakdown.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to MCU/PMIC, simplifying driver circuit design.
Vth=1.7V (Typical): Enters the fully conductive region even with low-voltage drive, supporting stable operation under battery voltage decay scenarios.
RDS(on)=11mΩ @ VGS=10V; 17mΩ @ VGS=4.5V: Ultra-low on-resistance significantly reduces temperature rise under full load, allowing for reduced heat sink copper area and improved system efficiency.
ID=40A: Ample continuous current margin to handle peak demands such as motor stall and power supply overcurrent.
Package DFN8(5X6)-B: Dual-chip integrated design with low parasitic parameters and low thermal resistance, supports high-frequency switching, saves PCB area, and simplifies layout.
Domain and module applications：
High-Efficiency DC-DC Converters: The dual N+N structure is suitable for synchronous rectification Buck/Boost topologies. Low on-resistance significantly improves heavy-load efficiency, facilitating module miniaturization.
Motor Drive Modules: 40A high current capability and low switching losses support high-frequency PWM control, resulting in smoother motor operation and significantly lower controller temperature rise.
Battery Protection and BMS Systems: 60V withstand voltage and microsecond-level switching response ensure fast shutdown during overcurrent/short circuit. Low internal resistance reduces self-heating of the protection board, extending battery life.
Automotive Auxiliary Power Supplies: Wide voltage range and robust package adapt to 12V/24V automotive buses, reliably handling harsh transients like load dump.
Power OR-ing and Load Switching: Dual independent MOSFETs achieve low-loss reverse isolation, supporting hot-swap and redundant power architectures.
Power Tools and Garden Machinery: High current density and low thermal resistance package handle high-load intermittent operation, improving overall equipment durability.
Server and Telecom Power Supplies: Replacing Schottky diodes in synchronous rectification significantly improves efficiency, suitable for high power density modules.
Selection Summary: The NVMFD5C674NLT1G-VB achieves a balance between withstand voltage, current carrying capacity, on-resistance, and dual-chip integration. It is a high-performance general-purpose choice for 60V low-voltage, high-current switching applications, especially suitable for power supply and motor control projects with strict requirements for power density, heat dissipation, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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