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NVMFD5C674NLWFT1G-VB Product details
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You are designing a high power density power module with limited PCB area, yet you need to handle a 40A high current output. Traditional MOS transistors are either bulky or have high conduction losses. The VBsemi NVMFD5C674NLWFT1G-VB is designed for this – it integrates 60V withstand voltage, 40A current carrying capacity, and an on-resistance of only 11mΩ into a DFN8(5X6)-B Dual N+N package, allowing high-power conversion design without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
Withstand Voltage 60V, suitable for various medium voltage applications
Gate Drive Range ±20V, compatible with multiple logic levels
Threshold Voltage 1.7V, reliable turn-on even with low-voltage drive
On-Resistance 17mΩ (4.5V Drive) / 11mΩ (10V Drive), extremely low losses
Maximum Current 40A, dual transistor parallel architecture, stronger current handling
Trench Technology, excellent switching performance and conduction characteristics
Domain and module applications：
DC-DC Buck/Boost Modules – Acts as the synchronous rectification power stage, effectively reducing conduction and switching losses, improving conversion efficiency.
Motor Drive Control – The Dual N+N configuration simplifies H-bridge circuit design, supports high-current loads, and stably drives power tools and robots.
Power Protection and Battery Management – Fast shutdown characteristics can promptly disconnect overcurrent paths, providing reliable protection for lithium battery packs and energy storage systems.
Automotive Power Systems – The 60V withstand voltage confidently handles automotive transient surges, providing solid power support for on-board chargers and DC-DC converters.
Server/Telecom Power Supplies – Undertakes efficient power switching in 12V~48V bus architectures, aiding thermal optimization of high-density power modules.
UPS Uninterruptible Power Supplies – Low on-resistance reduces temperature rise during continuous operation, improving long-term system reliability.
In a nutshell: The NVMFD5C674NLWFT1G-VB is not just an ordinary MOS transistor; it is the 'efficiency engine' and 'space saver' for your medium-voltage, high-current power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
