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NVMFWD024N06CT1G-VB Product details
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** Are you designing a high-power DC-DC converter or battery management system that needs to withstand 40A current surges while controlling temperature rise in a limited space? Ordinary MOSFETs often compromise—either lacking sufficient voltage rating or having high conduction losses. The VBsemi NVMFWD024N06CT1G-VB is engineered to solve this challenge: it integrates a 60V voltage rating, 40A current carrying capability, and an ultra-low on-resistance of 11mΩ into a compact DFN8(5X6)-B package using a dual N+N channel architecture, making high power density design manageable.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Drain-Source Voltage VDS: 60V, providing ample safety margin for 48V systems and automotive applications
- Gate Drive Range VGS: ±20V, compatible with various logic level drives
- Threshold Voltage Vth: 1.7V, reliable turn-on with low-voltage control signals
- On-Resistance RDS(ON): 17mΩ (VGS=4.5V), 11mΩ (VGS=10V), extremely low losses, effectively reducing heat generation
- Maximum Drain Current ID: 40A, dual N+N parallel design provides robust current handling capability
- Technology Platform: Trench process, optimizing switching performance and conduction characteristics
**
Domain and module applications：
- High-Power DC-DC Converters – Used as synchronous rectifiers or main switches, significantly improving conversion efficiency and reducing heatsink size.
- Power Tools / Robot Motor Drives – Utilizes low on-resistance and dual-channel symmetry for smooth high-current output.
- Lithium Battery Protection Boards / BMS – Provides fast circuit interruption during overcurrent or short circuit events, offering reliable protection for multi-cell battery packs.
- Automotive Power Systems – Withstands 60V voltage fluctuations, providing stable power for ECUs, sensors, and infotainment systems.
- Server / Telecom Power Supplies – Combines high-density packaging with low losses to meet the stringent demands of continuous high-power operation.
- Battery Chargers / Adapters – Replaces Schottky diodes, reducing forward voltage drop losses and improving efficiency across the full load range.
- Drones / E-Bikes – Balances lightweight design with high current drive capability, extending range and enhancing dynamic response.
In a nutshell: The NVMFWD024N06CT1G-VB is not just an ordinary dual N-MOSFET; it is the 'efficiency engine' and 'reliable cornerstone' for your high-power, high-density power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
