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NVMFD020N06CT1G-VB Product details
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** Are you designing a high power density power module with extremely limited board space, yet needing to handle 40A of current and 60V voltage stress? Traditional single-transistor solutions not only occupy significant area but also present challenges for heat dissipation and routing. The VBsemi NVMFD020N06CT1G-VB is designed for this purpose—it integrates two 60V, 40A MOSFETs into a single DFN8(5X6)-B dual N+N package, achieving an on-resistance as low as 11mΩ (at 10V drive), allowing high-power conversion designs to balance compact size with superior efficiency.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Voltage rating 60V, covering 48V systems and various industrial/automotive bus applications
- Gate drive range ±20V, compatible with 3.3V~12V logic level direct drive
- Threshold voltage 1.7V, excellent low-voltage turn-on characteristics
- On-resistance 11mΩ (VGS=10V) / 17mΩ (VGS=4.5V), extremely low losses
- Continuous drain current 40A, dual transistors can be paralleled for flexible power scaling
- Utilizes Trench technology, achieving both switching performance and conduction characteristics
**
Domain and module applications：
- **DC-DC Buck/Boost Modules** – Replaces two discrete MOSFETs in synchronous rectification topologies, saving over 30% board space while reducing temperature rise and improving conversion efficiency.
- **Motor Drive Control** – The dual N+N structure is suitable for H-bridge or half-bridge drives. The 40A current capability meets the needs of power tools, fans, and pump loads, providing smooth switching and strong impact resistance.
- **Battery Protection Boards / BMS** – Precisely controls charge/discharge paths. The 60V voltage rating provides ample safety margin, with microsecond-level response protecting cells from overcurrent and short circuit damage.
- **Server Power Supplies / Telecom Power Supplies** – The high-density DFN8(5X6) package combined with low on-resistance facilitates power stage miniaturization, adapting to stringent thermal environments.
- **Automotive Electronics / Industrial Control** – Withstands 60V bus voltage fluctuations, providing reliable power switching for actuators like motors, solenoids, and heaters.
- **UPS and Energy Storage Systems** – Dual-transistor integration simplifies inverter bridge leg design, improving system reliability and reducing parasitic parameter effects.
**In a nutshell:** The NVMFD020N06CT1G-VB is not just two simple MOSFETs; it is the 'integration powerhouse' and 'efficiency engine' for your high power density designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
