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NVMFWD020N06CT1G-VB Product details
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** Are you designing a high power density power module with limited PCB area but needing to handle dual high-current switching paths? Traditional discrete MOSFET solutions consume significant space and complicate routing. The VBsemi NVMFWD020N06CT1G-VB integrates two 60V, 40A N-channel MOSFETs into a single DFN8(5X6)-B package. Leveraging advanced Trench technology and a dual N+N architecture, it enables compact half-bridge or synchronous rectification designs, allowing high-power supplies to deliver superior performance within a constrained space.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Drain-Source Voltage VDS: 60V, providing ample safety margin for medium-voltage applications
- Gate Drive Range VGS: ±20V, compatible with various logic level drives
- Threshold Voltage Vth: 1.7V, reliable turn-on with low-voltage control signals
- On-Resistance RDS: 11mΩ (VGS=10V) / 17mΩ (VGS=4.5V), extremely low conduction losses
- Maximum Drain Current ID: 40A (per channel), dual transistors can be paralleled for higher current
- Package and Technology: DFN8(5X6)-B, Trench technology, balancing thermal performance and switching characteristics
**
Domain and module applications：
- **Synchronous Rectification DC-DC Modules** – The dual N+N structure is naturally suited for half-bridge/full-bridge topologies. Low RDS effectively reduces rectification losses, improving conversion efficiency by 2~3%.
- **Motor Drive Controllers** – 40A high current capability combined with 60V voltage rating, suitable for medium-voltage motor drive applications like power tools and drone ESCs.
- **Battery Charge/Discharge Management** – Serves as dual-path switches for battery pack charge/discharge switching or protection, with microsecond-level turn-off to safeguard cells.
- **Automotive Power Systems** – Withstands 60V voltage fluctuations, providing stable, efficient power switching solutions for automotive DC-DC converters, LED drivers, etc.
- **Server Power Supplies / Telecom Power Supplies** – Low on-resistance and DFN8 large-pad thermal design, suitable for high-density on-board power modules, reducing temperature rise.
- **Power Path Redundancy Control** – Dual independent MOSFETs can be used in ORing circuits for seamless main/backup power switching, improving system reliability.
**In a nutshell:** The NVMFWD020N06CT1G-VB is a dual N-channel, low on-resistance, high current medium-voltage power MOSFET. It combines the advantages of two transistors in a compact DFN8 package, serving as the 'dual-core powerhouse' and 'efficiency engine' for your high-density power supply and motor control designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
