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NTMFD5C672NLT1G-VB Product details
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The VBsemi NTMFD5C672NLT1G-VB is a dual N+N channel MOSFET manufactured using Trench technology, specifically designed for medium and low voltage power conversion, power management, and motor drive applications. Its compact DFN8(5X6)-B package offers excellent thermal dissipation and low parasitic inductance, suitable for high-density power PCB layouts. The device provides stable and efficient switching characteristics within a 60V drain-source voltage range. The gate drive supports 4.5V and 10V logic levels, facilitating flexible system design, while the dual-channel integration effectively simplifies circuit topology and enhances power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | 17(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 60V | 1.7V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.7V (Typical)
On-Resistance (VGS=4.5V): 17 mΩ (Typical)
On-Resistance (VGS=10V): 11 mΩ (Typical)
Maximum Drain Current (ID): 40A
Package: DFN8(5X6)-B
Configuration: Dual N+N Channel
Technology: Trench
Domain and module applications：
1. Synchronous Rectification DC-DC Converters: The dual N+N configuration is suitable for synchronous rectifier MOSFETs in Buck or Boost topologies, utilizing low on-resistance to significantly reduce rectification losses and improve conversion efficiency.
2. Power Management Units (PMU): Used for secondary side regulation in servers, communication equipment, and industrial power supplies, supporting high current output while maintaining thermal stability.
3. Battery Protection and Charge/Discharge Control: Serves as the main switch for charge/discharge paths, enabling fast turn-off during overcurrent or overvoltage conditions, suitable for power tools, drones, and energy storage devices.
4. Motor Drives: Drives low-voltage BLDC or brushed motors, suitable for fans, pumps, robot actuators, supporting high-frequency PWM speed control.
5. Server and Computing Power Supplies: Provides efficient power stages in VRMs or point-of-load (POL) power supplies, meeting high current demands for CPUs/GPUs.
6. Automotive Auxiliary Systems: Used for powering lighting, sensors, and infotainment systems in 12V/24V automotive networks, offering wide voltage margin and reliable switching performance.
7. High-Power LED Drivers: Used as power switches in constant current driver modules, supporting high current output for stable brightness control and ripple suppression.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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