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NVMFD5873NLWFT1G-VB Product details

Product introduction:

The NVMFD5873NLWFT1G-VB is a Dual N+N MOSFET optimized for medium and low voltage power switching and synchronous rectification applications. Utilizing Trench technology, it balances low conduction losses with high switching speed. The DFN8(5X6)-B package achieves a good compromise between thermal performance and board space. The combination of 60V voltage rating, 40A current carrying capability, and 11mΩ on-resistance makes it an ideal choice for DC-DC converters, motor drives, and battery protection, particularly suited for high power density, high-reliability industrial and automotive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6)-B Dual-N+N 60V 1.7V 40A 17(mΩ) 11(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6)-B Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6)-B Dual-N+N 60V 1.7V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6)-B Dual-N+N 60V 1.7V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6)-B Dual-N+N MOS

VDS=60V: Suitable for 12V/24V/48V systems, providing margin for switching voltage spikes, enhancing avalanche and short-circuit reliability.
VGS=±20V: Compatible with 3.3V~12V logic levels, can be directly driven by MCU/PMIC, simplifying driver circuit design.
Vth=1.7V (Typical): Effective turn-on even with low-voltage drive, combined with wide gate voltage range, adaptable to various control schemes.
RDS(on)=11mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing conduction losses and full-load temperature rise, potentially reducing heatsink design margin.
ID=40A: Dual N+N parallel architecture provides ample continuous current capability, meeting high-current power path requirements.
Package DFN8(5X6)-B: Dual-transistor integration saves PCB area, low parasitic inductance supports high-frequency switching, improving system power density.

Domain and module applications:


DC-DC Converters: Dual N+N topology is suitable for synchronous buck/boost circuits. Low on-resistance significantly improves heavy-load efficiency, facilitating module miniaturization.
Motor Drive Modules: Low PWM switching losses, high current drive capability matches brushed/brushless DC motors, noticeably reducing controller temperature rise.
Battery Protection and BMS: 60V voltage rating covers multi-cell lithium battery applications. Low internal resistance reduces self-heating of the protection board. Fast switching capability ensures reliable overcurrent protection.
Automotive Auxiliary Power Supplies: Wide voltage rating and high surge capability adapt to 12V/24V automotive buses, ensuring stable and reliable operation.
Server/Telecom Power Supplies: High-efficiency synchronous rectification replaces Schottky diodes, improving power conversion density and reducing cooling costs.
Power Tools and Industrial Control: High current and low on-resistance handle impact loads, extending tool continuous runtime and improving system robustness.

Selection Summary: The NVMFD5873NLWFT1G-VB achieves a balance between voltage rating, current capability, on-resistance, and dual-transistor packaging advantages. It is a versatile and efficient choice for 60V medium/low voltage, high current switching applications, particularly suitable for projects with strict requirements on efficiency, thermal dissipation, and PCB space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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