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NVMFS027N10MCLT1G-VB Product details
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**The NVMFS027N10MCLT1G-VB is a Single N-MOS deeply optimized for medium-voltage power switching applications. Using advanced SGT (Split Gate Trench) technology, it achieves an excellent balance between on-resistance, switching speed, and reliability. The DFN8(5X6) package offers low thermal resistance and a compact footprint, making it suitable for high-density power designs. The combination of 100V withstand voltage, 30A continuous current capability, and 18mΩ ultra-low on-resistance makes it a preferred alternative to traditional DPAK packaged devices in telecom power, industrial control, and automotive systems.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 1.8V | 30A | 22(mΩ) | 18(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 1.8V | 30A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 1.8V | 30A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
- **VDS=100V**: Suitable for 24V/36V/48V systems, providing ample margin for voltage spikes, significantly reducing the risk of avalanche breakdown.
- **VGS=±20V**: Compatible with wide gate drive ranges, supporting 4.5V logic levels and 10V standard drive, flexibly adapting to MCU/PMIC and dedicated gate driver ICs.
- **Vth=1.8V (typical)**: Moderate threshold voltage, strong anti-interference capability, while ensuring reliable turn-on with low-voltage drive.
- **RDS(on)=18mΩ @ VGS=10V**: Ultra-low on-resistance, significantly reducing full-load loss, effectively minimizing heatsink size or copper area.
- **RDS(on)=22mΩ @ VGS=4.5V**: Maintains low on-impedance even with low-voltage drive, suitable for battery-powered or low-voltage gate drive applications.
- **ID=30A**: Ample continuous current capability, easily handling surge loads like motor startup and power hot-swap.
- **Package DFN8(5X6)**: Bottom-side thermal pad design, low thermal resistance, low parasitic inductance, supports high-frequency switching, while saving PCB area.
- **Technology SGT**: Shielded gate structure reduces Miller capacitance, switching losses significantly lower than traditional trench technology, enabling high-efficiency, high-frequency designs.
**
Domain and module applications：
- **DC-DC Converters**: Replaces multiple paralleled MOSFETs in synchronous rectification applications, reducing conduction loss, improving heavy-load efficiency by 2~3%, suitable for telecom power and server power modules.
- **Motor Drive Control**: Low switching loss and low on-resistance make PWM control more efficient, motor operation smoother, and controller temperature rise significantly reduced.
- **Lithium Battery Protection and BMS**: 100V withstand voltage covers multi-cell lithium battery scenarios, low internal resistance reduces self-heating of the protection board, fast turn-off characteristics ensure reliable overcurrent/short-circuit protection.
- **Automotive Auxiliary Power**: Wide safe operating area and voltage margin adapt to 12V/24V automotive bus, meeting ISO 7637 load dump transient requirements, high reliability.
- **Industrial Power and Inverters**: Low gate charge from SGT technology is suitable for high-frequency hard-switching topologies, helping to increase power density and simplify thermal design.
- **Power Tools and Garden Machinery**: 30A high current capability supports high-load operation, small DFN8 package suitable for compact internal layouts of handheld devices.
**Selection Summary**: The NVMFS027N10MCLT1G-VB achieves a high-quality balance between withstand voltage, on-resistance, current carrying capability, and package thermal performance, making it a high-performance general-purpose choice for 100V medium-voltage switching applications. Its low-loss characteristics from SGT technology are particularly suitable for power and motor control projects with strict requirements for efficiency, power density, and high-temperature reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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