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FDMS86150ET100-VB Product details

Product introduction:

The FDMS86150ET100-VB is a Single N-MOS deeply optimized for high power density switching applications, utilizing advanced SGT (Shielded Gate Trench) technology to achieve an excellent balance between on-resistance, switching speed, and reliability. The DFN8(5X6) package combines excellent heat dissipation capability with a compact footprint, making it suitable for power conversion and control applications under high current and high temperature conditions. The combination of 100V withstand voltage, 105A continuous current capability, and 5.6mΩ ultra-low on-resistance makes it an ideal power switch option for server power supplies, communication equipment, power tools, and automotive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 3V 105A 5.6(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 3V 105A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 3V 105A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N MOS

- VDS=100V: Suitable for 48V/60V/80V bus systems, providing ample voltage margin for spikes, reducing avalanche breakdown risk, and enhancing system reliability.
- VGS=±20V: Compatible with standard gate drive circuits, can achieve full conduction with 10V~15V drive voltage, and can safely handle drive transient overshoots.
- Vth=3V (typical): Moderate threshold voltage, good noise immunity, while ensuring stable turn-on under standard drive levels.
- RDS(on)=5.6mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction losses, effectively suppresses temperature rise, allowing for smaller heatsinks or copper areas.
- ID=105A: Extremely strong continuous current capability, can handle high transient current surge scenarios like motor stall and power supply hot-swap, with ample margin.
- Package DFN8(5X6): Low parasitic inductance and thermal resistance, supporting high-frequency switching, while providing a bottom-side thermal pad for efficient PCB heat dissipation.
- Technology SGT: Shielded gate structure reduces Miller capacitance, improves switching speed, reduces switching losses, suitable for high-frequency PWM applications.

Domain and module applications:


- Server and Telecom Power Supplies: 100V withstand voltage combined with 5.6mΩ on-resistance significantly reduces losses in synchronous rectification and OR-ing circuits, improving overall system efficiency.
- Power Tools and Garden Machinery: 105A high-current capability meets stall and startup surge requirements, SGT technology supports high-frequency speed control for smoother motor control.
- Automotive DC-DC Converters: Ample switching stress margin under 48V/72V bus systems, low thermal resistance package suitable for engine compartment high-temperature environments.
- Battery Discharge and Protection Circuits: Milliohm-level on-resistance reduces heating of the protection board, high current carrying capacity supports high-rate discharge applications.
- Industrial Motor Drives: Low switching losses help increase PWM carrier frequency, improve current waveform quality, and reduce driver temperature rise.
- Power Inverters: Used in UPS, photovoltaic energy storage, etc., low conduction losses improve full-load efficiency, DFN8(5X6) facilitates compact design.
- High-Power DC-DC Modules: Replacing traditional package devices in synchronous rectification bridge arms can improve heavy-load efficiency by 2~3% and reduce output ripple.

Selection Summary: The FDMS86150ET100-VB, with its core advantages of 100V withstand voltage, 5.6mΩ ultra-low on-resistance, and 105A high-current capability, combined with SGT technology and DFN8(5X6) package, provides a cost-effective solution for high-power, high-frequency, high-reliability power conversion and control applications, especially suitable for projects with strict requirements on heat dissipation, efficiency, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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