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NTMFS005N10MCLT1G-VB Product details
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The VBsemi NTMFS005N10MCLT1G-VB is a Single N-Channel MOSFET belonging to the VBsemi brand high-performance power MOSFET series. This product is manufactured using advanced SGT (Shielded Gate Trench) technology, featuring extremely low on-resistance and high current handling capability, suitable for various medium and low voltage power conversion and power control applications. The device has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) rating of ±20V, and is packaged in DFN8(5X6), balancing efficient heat dissipation with a compact board-level footprint, suitable for high-density power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | 5.6(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
- Drain-Source Voltage (VDS): 100V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance (VGS=10V): 5.6 mΩ
- Maximum Drain Current (ID): 105A
- Package Type: DFN8(5X6)
- Technology Type: SGT (Shielded Gate Trench)
Domain and module applications：
1. High-Efficiency Switching Power Supplies: NTMFS005N10MCLT1G-VB is suitable for synchronous rectification and switching circuits in server power supplies, communication power supplies, and industrial power supplies. Its low on-resistance significantly reduces losses and improves conversion efficiency.
2. Motor Drive Modules: This device can be used in 100V class brushless DC motor drives, power tools, and robot joint motor controllers, supporting high current output for precise start/stop and speed control.
3. Battery Protection and Management Systems: In power batteries and energy storage battery packs, this MOSFET can serve as a switching element in the charge/discharge circuit, leveraging its 105A high current capability and reliable voltage tolerance to ensure system safety.
4. DC-DC Converters: Suitable for automotive DC-DC converters, module power supplies, and buck-boost conversion circuits, used as power stage switching transistors to facilitate miniaturized and efficient designs.
5. Automotive Electrical Systems: In the automotive electronics field, it can be used for lighting control, body electronics, auxiliary power supplies, and electric power steering applications, meeting high reliability requirements.
6. Power Load Switches: As a high-side or low-side load switch for intelligent power distribution, industrial control, and hot-swap circuits in communication equipment, providing low thermal dissipation high-current switching capability.
7. High-Power LED Lighting Drivers: In 100V input LED driver power supplies, this model can act as a constant current switching transistor, improving the stability and energy efficiency of the lighting system.
With its robust 100V/105A parameters, an on-resistance of only 5.6mΩ, and low switching losses from SGT technology, this product is an ideal choice for high-performance power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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